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Light emitting diode chip without wire bonding and preparation method thereof

A light-emitting diode and chip technology, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as high working voltage, fast light decay, and failure to connect to the line, so as to reduce the consumption of gold wires, avoid wire bonding processing, and simplify Effect of Package Soldering Process

Inactive Publication Date: 2012-03-07
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the surface of the wire bonding plate is not clean enough, it will cause a series of problems such as failure to connect, high working voltage, and fast light decay.

Method used

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  • Light emitting diode chip without wire bonding and preparation method thereof
  • Light emitting diode chip without wire bonding and preparation method thereof
  • Light emitting diode chip without wire bonding and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The fabrication, packaging and welding of the above-mentioned gallium nitride-based light-emitting diode chip on the sapphire substrate without wire bonding is realized by the following scheme.

[0032] The fabrication steps of the gallium nitride-based light-emitting diode chip on the sapphire substrate are as follows:

[0033] Step 1: Etching a P-region step on the GaN epitaxial wafer.

[0034] Step 2: making a protective layer on the gallium nitride epitaxial wafer, exposing part of the N region, and then using one or more laser beams to draw parallel lines in the exposed area. The sapphire substrate is then etched in a mixture of phosphoric acid and sulfuric acid at 270°C to obtain a V-shaped inclined side. Wherein, the laser only scribes the chip boundary in a certain direction, preferably the long side direction.

[0035] Step 3: making a transparent conductive layer, preferably made of indium tin oxide (ITO).

[0036] Step 4: Evaporate an insulating layer at t...

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PUM

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Abstract

The invention relates to a light emitting diode chip without wire bonding and a preparation method thereof. According to the invention, a P electrode and an N electrode of a light emitting diode chip are distributed at two side surfaces of the chip as well as the two electrodes are in a narrow strip shape and are distributed oppositely; the sides surfaces of the chip are processed into inclined surfaces and the electrodes are extended on the inclined surfaces; an embedded packaging and welding structure is employed and the chip is placed in the structure; and connection between chip electrodes and the packaging structure is realized by using fused and solidified solders. According to the invention, a nitride-based light emitting diode chip processed by the method is utilized; therefore, during the packaging process, a wire bonding step can be omitted; a light emitting area and a light transmission area of the chip surface can be increased; and a technical demand on chip electrodes by the packaging can be reduced.

Description

technical field [0001] The invention relates to a gallium nitride-based light-emitting diode chip with a new shape structure, in particular to a gallium nitride-based light-emitting diode in which P and N electrodes are relatively distributed in narrow strips. The side where the electrodes are located is made into a partial inclined surface. The metal part of the light-emitting diode extends to cover the inclined surface; the invention also relates to the seal-and-turn welding structure and welding method of the light-emitting diode. Background technique [0002] Gallium nitride-based light-emitting diodes on sapphire substrates are a light-emitting device that converts electrical energy into light energy, and are currently the most promising new generation of light sources. Gallium nitride-based light-emitting diodes on sapphire substrates are conventionally manufactured by a chip factory with a complete chip structure, and then the chip is packaged and processed by a packa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/00
Inventor 罗红波周武
Owner HC SEMITEK CORP
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