Display device manufacturing method
A technology of a display device and a manufacturing method, which is applied in the directions of identification devices, lighting devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of easy peeling of substrates, and achieve the effect of suppressing the reduction of electrical characteristics
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Embodiment 1
[0065] A polyethersulfone plastic film (hereinafter abbreviated as PES film) having a thickness of 0.2 mm and a size of 300 mm×300 mm was prepared as a substrate. The PES film exhibits good flexibility. Utilize the sputtering method to form a thick 100nm silicon dioxide film on this PES film ( Figure 4 (a)).
[0066] Next, on the silicon dioxide film surface of the PES film, according to Figure 4 (b) and Figure 7 As shown in the configuration shown in FIG. Image 6 A 10 mm x 10 mm electrode pattern with operating and terminal areas is shown.
[0067] The ITO-coated PES film was ultrasonically washed in pure water, and the pure water was removed with an air knife. Then, a flexographic printing device was used to print a liquid crystal alignment agent on the 10mm×10mm operation area centered on the above electrode pattern. The range of 30mm × 30mm is baked to form an alignment film with a thickness of 50nm ( Figure 4 (c) and Figure 7 ). After the orientation treatme...
Embodiment 2
[0074] Obtained by the same method as in Example 1, except that instead of using the liquid crystal sealing material "Photrek S-WB" manufactured by Sekisui Chemical Co., Ltd., the material described in Japanese Patent Application Laid-Open No. 10-265547 was used as the first sealing material. A liquid crystal display device for evaluation. No peeling of the substrate occurred during the process. The voltage retention rate was measured in the same manner as in Example 1, and it was 89.5%. Then, the liquid crystal display device was placed in a constant temperature and humidity chamber controlled at 60° C. and 90% RH for 480 hours, and then the voltage retention rate was measured again, and the voltage retention rate was as low as 35%.
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Abstract
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