Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and method for driving semiconductor device

A driving method and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problems of charge injection or removal for a long time, difficult to achieve high-speed writing or erasing, and reduce power consumption. , The effect of ensuring high speed and improving reliability

Inactive Publication Date: 2012-03-14
SEMICON ENERGY LAB CO LTD
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, there is a problem that it is difficult to increase the speed of writing or erasing because it takes a long time to inject or remove charges.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method for driving semiconductor device
  • Semiconductor device and method for driving semiconductor device
  • Semiconductor device and method for driving semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0058] In this embodiment, refer to Figure 1A-1 , A-2 and 1B and figure 2 The basic circuit configuration and operation of a semiconductor device according to one embodiment of the disclosed invention will be described. In addition, in circuit diagrams, in order to indicate transistors using an oxide semiconductor, the symbol "OS" may be attached.

[0059]

[0060] First, refer to Figure 1A-1 , A-2 and Figure 1B Explain the most basic circuit structure and its operation. exist Figure 1A-1 In the shown semiconductor device, the first line (1st Line) is electrically connected to the source electrode (or drain electrode) of the transistor 160 , and the second line (2nd Line) is electrically connected to the drain electrode (or source electrode) of the transistor 160 . In addition, the third line (3rdLine) is electrically connected to the source electrode (or drain electrode) of the transistor 162 , and the fourth line (4thLine) is electrically connected to the gate elect...

Embodiment approach 2

[0124] In this embodiment, refer to Figure 5A to Figure 10C The structure of a semiconductor device according to one aspect of the disclosed invention and its manufacturing method will be described.

[0125]

[0126] Figure 5A and 5B It is an example of the structure of a semiconductor device. Figure 5A shows a cross-section of a semiconductor device, Figure 5B A plane of a semiconductor device is shown. Figure 5A equivalent to along Figure 5B Sections of A1-A2 and B1-B2. Figure 5A and Figure 5B The shown semiconductor device has a transistor 160 using a first semiconductor material on the lower part and a transistor 162 using a second semiconductor material on the upper part. The first semiconducting material and the second semiconducting material are preferably different materials. For example, a semiconductor material other than an oxide semiconductor may be used as the first semiconductor material, and an oxide semiconductor may be used as the second semico...

Embodiment approach 3

[0261] In this embodiment, use Figures 11A to 11F Now, a case where the semiconductor device described in the above embodiments is applied to electronic equipment will be described. In this embodiment mode, a case where the above-mentioned semiconductor device is used in electronic equipment such as a computer; a mobile phone (also referred to as a mobile phone, a mobile phone device); a portable information terminal (including a portable game machine, an audio playback devices, etc.); video capture devices such as digital cameras and digital video cameras; electronic paper; and television devices (also called television sets or television receivers), etc.

[0262] Figure 11A A notebook personal computer is shown, and includes a housing 701, a housing 702, a display unit 703, a keyboard 704, and the like. The semiconductor device shown in the previous embodiment is provided in at least one of the housing 701 and the housing 702 . Therefore, it is possible to realize a not...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a semiconductor device and a method for driving the semiconductor device. It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. The semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed.

Description

technical field [0001] The disclosed invention relates to a semiconductor device using a semiconductor element and a driving method thereof. Background technique [0002] Storage devices using semiconductor elements can be broadly classified into volatile storage devices whose stored content disappears if power is not supplied, and nonvolatile storage devices that retain stored content even when power is not supplied. [0003] A typical example of the volatile storage device is DRAM (Dynamic Random Access Memory: Dynamic Random Access Memory). DRAM stores information by selecting transistors constituting memory elements and storing charges in capacitors. [0004] According to the above principle, since the charge of the capacitor disappears when information is read out from the DRAM, writing work needs to be performed again every time information is read out. In addition, since charges flow out or inflow even when the transistor is not selected due to leakage current (off ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105H01L21/8239G11C11/34
CPCG11C11/405G11C16/02G11C16/0408H10B99/00H10B12/00
Inventor 井上广树加藤清松崎隆德长塚修平
Owner SEMICON ENERGY LAB CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com