Transverse parasitic PNP device in SiGe HBT technology and manufacture method thereof
A technology of lateral type and process conditions, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high cost, complicated deep trench isolation process, and high cost of epitaxy in the collector area
Active Publication Date: 2012-03-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
The existing SiGe HBT manufacturing process is mature and reliable, but the main disadvantages are: 1. The epitaxy cost of the collector area is high; 2. The deep trench isolation process is complicated and the cost is high
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[0024] Such as figure 1 Shown is a schematic structural diagram of a lateral parasitic PNP device in the SiGe HBT process of the embodiment of the present invention. The lateral parasitic PNP device in the SiGe HBT process of the embodiment of the present invention is formed on a P-type silicon substrate, and the active region is isolated by shallow trench field oxygen. figure 1 In the shown shallow trench isolation, an N-type deep well is also formed on the P-type silicon substrate, and the N-type deep well is composed of an N-type ion implantation region, and the N-type ion implantation of the N-type deep well The process conditions are as follows: impurity implantation is P, implantation energy is 500kev-3000kev, dose is 1e14cm -2 ~5e15cm -2 . The lateral type parasitic PNP device includes:
[0025] A base region is composed of an N-type ion implantation region formed in the active region, and the N-type ion implantation region is figure 1 In the N-type implantation of...
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The invention discloses a transverse parasitic PNP device in SiGe HBT (Silicon-Germanium heterojunction bipolar transistor) technology. An active region is isolated by a shallow slot field oxygen unit. The transverse parasitic PNP device comprises a base region, an N type buried layer, an emission zone and a collecting zone. A vertical depth of the base region is greater than a depth of a bottom of the shallow slot field oxygen unit, and the base region transversely covers at least two adjacent active regions. The N type buried layer is formed at the bottom of the shallow slot field oxygen unit which is adjacent to the base region, and contacts the base region. Deep-hole contact is formed at a shallow slot field oxygen unit at a top of the N type buried layer to lead out a base electrode.The emission zone and the collecting zone are respectively composed of a P type SiGe epitaxial layer on different active regions covered by the base region. The invention also discloses a manufacturemethod of the transverse parasitic PNP device in the SiGe HBT technology. The transverse parasitic PNP device can be used as an output device in a high speed high gain HBT circuit, and providing one more device selection for the circuit is realized without an extra technology condition.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a lateral parasitic PNP device in the SiGe HBT process; the invention also relates to a method for manufacturing the lateral parasitic PNP device in the SiGe HBT process. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its application is limited. Silicon...
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IPC IPC(8): H01L29/735H01L29/08H01L21/331H01L21/265
Inventor 钱文生刘冬华段文婷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP