Diamond type quad-resistor cells of pram

A technology for accessing memory and random phase change, which is used in read-only memory, static memory, digital memory information and other directions to achieve the effect of reducing current requirements and reducing resistance

Active Publication Date: 2012-03-14
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

That is, the set and reset currents of conventional PRAM cells cannot be reduced beyond a m

Method used

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  • Diamond type quad-resistor cells of pram
  • Diamond type quad-resistor cells of pram
  • Diamond type quad-resistor cells of pram

Examples

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[0040] Aspects of the embodiments are disclosed in the following description and related drawings for such embodiments. Alternative embodiments may be designed without departing from the scope of the invention. In addition, well-known elements used and applied in the embodiments will not be described in detail or will be omitted so as not to obscure related details.

[0041] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily construed as preferable or advantageous over other embodiments. Likewise, the term "embodiments" does not require that all embodiments include the discussed feature, advantage, or mode of operation. The terms used herein are only used for the purpose of describing specific embodiments and are not intended to limit the present invention. As used herein, unless the context clearly dictates otherwise, the singular forms "a" and "the" are intended to ...

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Abstract

A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) formed over and coupled to the heater resistor, and a top electrode coupled to the phase change material. The phase change material contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material.

Description

technical field [0001] The disclosed embodiments relate to methods of forming phase change random access memory (PRAM) cells and embodiments of phase change random access memory (PRAM) cells. More particularly, the disclosed embodiments relate to methods of forming a diamond-shaped four-resistor cell of a phase change random access memory (PRAM) and embodiments of a diamond-shaped four-resistor cell of a phase change random access memory (PRAM) . Background technique [0002] Phase change memory (PCM) is an emerging memory with non-volatile characteristics and bit access capability. Phase change memory (PCM) advantageously provides fast read / write speeds, is durable, retains data well, and is scalable. PCM can provide random bit access capability. Therefore, PCM may be referred to as phase change random access memory (PRAM). [0003] A conventional PRAM cell will now be described with reference to FIG. 1 . A PRAM cell typically includes a transistor 112 and a PRAM resis...

Claims

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Application Information

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IPC IPC(8): G11C16/02H01L27/24H01L45/00
CPCH10B63/30H10N70/00G11C13/0004G11C13/0069G11C2013/008G11C2213/52H10B63/80H10B63/82H10N70/821H10N70/8413H10N70/231H10N70/8828H10N70/063H10N70/021
Inventor 李霞
Owner QUALCOMM INC
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