Diamond type quad-resistor cells of pram
A technology for accessing memory and random phase change, which is used in read-only memory, static memory, digital memory information and other directions to achieve the effect of reducing current requirements and reducing resistance
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[0040] Aspects of embodiments are disclosed in the following description and associated drawings directed to such embodiments. Alternative embodiments may be devised without departing from the scope of the present invention. Additionally, well-known elements used and applied in the described embodiments will not be described in detail or will be omitted so as not to obscure the relevant details.
[0041] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. Likewise, the term "embodiments" does not require that all embodiments include the discussed feature, advantage or mode of operation. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to in...
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