Diamond type quad-resistor cells of pram
A technology for accessing memory and random phase change, which is used in read-only memory, static memory, digital memory information and other directions to achieve the effect of reducing current requirements and reducing resistance
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[0040] Aspects of the embodiments are disclosed in the following description and related drawings for such embodiments. Alternative embodiments may be designed without departing from the scope of the invention. In addition, well-known elements used and applied in the embodiments will not be described in detail or will be omitted so as not to obscure related details.
[0041] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily construed as preferable or advantageous over other embodiments. Likewise, the term "embodiments" does not require that all embodiments include the discussed feature, advantage, or mode of operation. The terms used herein are only used for the purpose of describing specific embodiments and are not intended to limit the present invention. As used herein, unless the context clearly dictates otherwise, the singular forms "a" and "the" are intended to ...
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