The invention discloses a preparation method of
a diamond-type groove and a
semiconductor device, and the method comprises the following steps: S1, providing a substrate, arranging a gate structure on the substrate, and defining a region, where
a diamond-type groove is to be formed, in the substrate at two sides of the gate structure as a target region; step S2, depositing a layer of
hard mask layer on the substrate, and
etching the
hard mask layer to remove the
hard mask material covering the target area so as to obtain a patterned hard
mask layer; s3, performing
oxygen ion implantation on the target area to form an
oxygen ion implantation layer, and obtaining a sacrificial
oxide layer after annealing; and S4, taking the patterned hard
mask layer as a
barrier layer, removing the sacrificial
oxide layer through a high selection ratio process to form an initial groove, and
etching the initial groove to obtain the
diamond type groove. According to the invention, the depth uniformity of the plurality of
diamond-type grooves in the device can be improved.