71results about How to "Realize large area" patented technology

The invention discloses a method for preparing high-orientation small organic molecule semiconductor single-crystal patterns with the controllable sizes. The method is based on capillary force etching and polymer auxiliary organic vapor treatment. In addition, solvent softening samples are utilized, so that the method is different from traditional capillary force etching. In a polymer auxiliary organic vapor treatment and capillary force etching process, a small organic molecule semiconductor / polymer compound membrane in tight contact with a mould plate is exposed in saturate organic vapor to be softened and even resolved partially. Under the capillary force action, polymer can drive a small organic molecule semiconductor to climb up along the lateral wall of the mould plate to be filled into a groove which is formed between the mould plate and a substrate. The small organic molecule semiconductor trends to be recrystallized under the dual action of the limit of patterns of the mould plate and the capillary force. Finally, a high-orientation small organic semiconductor single-crystal micro structure is formed on polymer. The organic vapor and the polymer can provide media for recrystallization of the small organic molecule semiconductor. The method can form large-size, even-size and high-orientation small organic molecule semiconductor patterns on the surface of the polymer by regulating the kind of polymer, the concentration of mixed solution, the kind of organic solvents and vapor pressure.

The invention discloses a composite electrode of a flexible dye-sensitized solar cell and a preparation method thereof. The composite electrode consists of a conducting polymer layer (3) on a conductive substrate and a quasi-solid electrolyte layer (4), wherein the conductive substrate is an ITO or FTO flexible plastic sheet, or ITO or FTO glass; the conducting polymer layer (3) is prepared from a conducting polymer, an organic solvent and carbon black, and the ratio of the conducting polymer to the organic solvent to the carbon black is 4.5 to 1 to 0.1; and the quasi-solid electrolyte layer (4) consists of the conducting polymer, the organic solvent, inorganic nano-powder and an ionic liquid, and the ratio of the conducting polymer to the organic solvent to the inorganic nano-powder to the ionic liquid is 4.5 to 1 to 0.24 to 0.04. The preparation method thereof comprises the steps of: preparing the conducting polymer layer on the conductive substrate, and performing heat treatment at the temperature of 80 DEG C; and finally, coating a layer of quasi-solid electrolyte on the conducting polymer layer to obtain the composite electode. The conducting polymer is 1.3 percent aqueous solution of PEDOT: PSS. The composite electrode has the advantages of simple preparation method and low cost, and is suitable for the application of the flexible dye-sensitized solar cells.

The invention provides a copper nanowire / copper film composite structure and a preparation method thereof, and aims to provide a copper nanowire / copper film composite structure and a magnetron sputtering preparation method thereof. The invention employs a small deposition angle direct current magnetron sputtering deposition technology and prepares a copper nanowire / copper film composite structure on a glass substrate by proper adjusting of film thickness, substrate temperature and substrate bias voltage. The copper nanowire / copper film composite structure provided by the invention has smooth copper nanowire surface, uniform radial thickness, a length of 0.1-5mm, a diameter of 100-500nm and a copper film thickness of 50-100nm. The copper nanowire is parallel to the copper film surface and embedded in the copper film with a thickness less than that of the copper nanowire. According to the invention, metal copper film surface is embedded with sub-wavelength copper nanowire, which has potential application prospect infields related to surface plasma.

The invention discloses a material treatment device with a plasma jet array cooperating with mechanical rotational motion. The material treatment device comprises a cavity, the jet array, a support and an object table; multiple even plasma jets generated by the jet array are coupled into large-area even low-temperature plasma through interaction among charged particles; a plasma generator is fixed above the object table through the support and can achieve multi-dimensional adjustment on the aspects of the direction, position and space. A speed-adjustable electric rotary disc is integrated in the object table, and constant-speed rotational motion of a material to be treated can be achieved. Plasma generation and material treatment can be carried out in the cavity according to actual needs. The plasma jet array is generated and cooperates with electrical, optical and mechanical engineering, the material can be treated evenly at a large area, and the device can be applied to study, teaching and industrial production popularization of material surface modification.

Fabrication method of rhombic metal nanoparticle array structure: (1) select finely polished silicate glass as the substrate, deposit a layer of chromium with a thickness of several nanometers on the glass surface; The polystyrene nanospheres are mixed in proportion; (3) the chrome-plated glass plate is hydrophilized by chemical method; (4) a layer of mixed polystyrene nanospheres is self-assembled on the surface of the chrome-plated glass plate after the hydrophilization treatment (5) adopt reactive ion etching machine (RIE) to etch the self-assembled layer of polystyrene nanospheres made, and completely etch away the small polystyrene nanospheres in diameter; (6) use the etched polystyrene nanospheres The self-assembled layer of polystyrene nanospheres is used as a mold, and the gap between balls is filled with metal; (7) the self-assembled layer of polystyrene nanospheres is removed to obtain a diamond-shaped metal nanoparticle array structure. The arrayed metal nano-array structure produced by the invention can be applied to the field of biosensing, and realize multi-channel rapid detection of various biomolecules.

The invention discloses a large-area and high-quality graphene transferring method and belongs to the technical field of material science. The transferring method comprises steps as follows: graphene/Cu is flattened; PMMA slurry is uniformly sprayed to one surface of graphene/Cu; graphene/Cu with sprayed PMMA slurry is heated, and PMMA/graphene/Cu is obtained; Cu is etched, and PMMA/graphene is obtained; PMMA/graphene is cleaned, clean PMMA/graphene is flatly spread on a target substrate, and a PMMA/graphene/target substrate is obtained; the PMMA/graphene/target substrate is heated under normal pressure, nitrogen is introduced, and high-pressure heating is performed; the PMMA/graphene/target substrate is irradiated with deep ultraviolet; PMMA is removed, and graphene/target substrate is soaked to be cleaned and blown with nitrogen to be dried. Graphene obtained through transferring has no folds or damage, and large-area and high-quality transferring of graphene is realized.

The invention discloses a chromatism-free patterning carbon nanotube transparent conductive film and a preparation method of the chromatism-free patterning carbon nanotube transparent conductive film. The chromatism-free patterning carbon nanotube transparent conductive film comprises a transparent substrate, a patterning carbon nanotube film which is at least distributed in a visible area on the surface of the transparent substrate, and a patterning insulating material layer distributed on the surface of the transparent substrate, the insulating material layer and the carbon nanotube film are staggered and complemented at least in the visible area, and the light transmittance of the insulating material layer and the light transmittance of the carbon nanotube film are also fundamentally consistent. The preparation method includes the steps of forming the patterning insulating material layer on the surface of the transparent substrate, and forming the patterning carbon nanotube film at least in the visible area on the surface of the transparent substrate. Preferably, the insulating material layer can be mainly made of hydrophobic insulating material, and paint can be further mixed. According to the chromatism-free patterning carbon nanotube transparent conductive film and the preparation method of the chromatism-free patterning carbon nanotube transparent conductive film, high-efficiency, large-area and continual preparation of the chromatism-free patterning carbon nanotube transparent conductive film can be achieved, the technology is easy and controllable, needed equipment is simple, cost is low, optical and electric properties of products are good, and the chromatism-free patterning carbon nanotube transparent conductive film has wide application prospects.

The invention discloses a composite film plating device which comprises a vacuum chamber and a workpiece rotating frame located in the vacuum chamber. An ion beam source, a pulsed arc ion source and amagnetic filtering arc ion source are integrated in the vacuum chamber. The ion beam source is used for cleaning a workpiece or assisting deposition. The pulsed arc ion source is used for exciting agraphite target material to generate carbon ions and deposit a Ta-C carbon film. The magnetic filtering arc ion source is used for exciting the metal target material, generating metal ions and depositing a metal film, an alloy film or a compound film. According to the device, the ion beam technology, the magnetic filtering ion plating technology and the pulse ion plating technology are integratedin one vacuum chamber, multiple film plating modes are provided, multifunctional and structural advanced film preparation is achieved, and the device has the characteristics of being rich in functionand high in expansibility and is suitable for developing scientific research and diversified production in the industrial field. Particularly, the Ta-C carbon film which is low in stress, high in bonding strength and adjustable in structure and performance can be efficiently prepared by utilizing the device.

The invention relates to a light emitting diode (LED) display screen and provides an unaided-eye three-dimensional (3D) LED display screen and a manufacturing technique thereof, wherein the unaided-eye 3D LED display screen is capable of solving the problem that alignment between an LED display screen and a 3D grating is hard to achieve due to separation and split joint between the LED display screen and the 3D grating, and achieving large-area and high-brightness LED 3D unaided-eye display. The unaided-eye 3D LED display screen comprises an LED display module and a transparent grating panel, wherein the transparent grating panel is fixedly arranged on the LED display module and located right in front of an LED array. The manufacturing technique comprises the following steps: (1) preparing materials which are the LED display module, two grating plates made of film material and three acrylic plates; (2) manufacturing the transparent grating panel; and (3) fix-molding, namely the transparent grating panel manufactured in the step (2) is fixedly arranged on the LED display module in the step (1) and located right in front of the LED array, and then the unaided-eye 3D LED display screen is manufactured.

The invention discloses a gallium-nitride-based light-emitting diode with a silver nanowire transparent electrode. The gallium-nitride-based light-emitting diode comprises a substrate, an epitaxial layer, a nano film, a silicon dioxide layer, a P electrode and an n electrode, wherein the epitaxial layer is manufactured on the substrate, and a platform surface is formed at one side of the epitaxial layer; the epitaxial layer is used for excitation, light emitting and electric injection; the nano film grows on the epitaxial layer and is used as a current expansion layer; the silicon dioxide layer is manufactured at one ends of the epitaxial layer and the nano film, and covers a part of the upper surface of the nano film; the P electrode is manufactured on the nano film; and the n electrode is manufactured on the platform surface of the epitaxial layer. The method has the characteristics of simple process, convenience in operation and high efficiency and the like, and simultaneously the gallium-nitride-based light-emitting diode can replace the traditional ITO (Indium Tin Oxide) as a novel transparent electrode of an LED (Light-Emitting Diode). The invention has the advantages that not only can the cost be reduced, but also the large-area and industrial production can be realized simultaneously.

The invention discloses a preparation method of a titanium alloy surface Ti-based amorphous coating and belongs to the technical field of metal material surface modification. The preparation method of the titanium alloy surface Ti-based amorphous coating comprises the following steps: pretreating a titanium alloy workpiece; connecting the titanium alloy workpiece with a cathode of a power supply to form a workpiece electrode, and connecting a Ti-based amorphous material with an anode of the power supply to form a processing electrode; switching on the power supply, so that the Ti-based amorphous coating is prepared. The preparation method of the titanium alloy surface Ti-based amorphous coating has the beneficial effects that large-area and rapid preparation of the titanium alloy surface Ti-based amorphous coating can be realized and the obtained Ti-based amorphous coating has good abrasion performance.

The invention provides high-elasticity intelligent clothes based on a liquid metal and further provides a preparation method and application of the high-elasticity intelligent clothes. The high-elasticity intelligent clothes comprises a controller part and a functional part, wherein the functional part comprises an electrophysiological detection module, an electrochemical detection module and a heating and heat preservation module. According to the high-elasticity intelligent clothes, printing of a flexible stretchable circuit on clothes is realized, and interconnection wires and electrodes ofthe liquid metal do not fail under various deformation conditions of the clothes; and a circuit manufactured by the method has excellent tensile stability and repeatability. A conductive ink disclosed by the invention is low in cost, utilization rate of the liquid metal is high, using amount of the liquid metal is low, the circuit is adjustable in line width, extremely high production efficiencyis achieved, and the preparation method is very suitable for large-scale production of elastic circuits.

The invention discloses a conductive substrate of a large-area dye-sensitized solar cell, and a dye-sensitized solar cell with the conductive substrate. The conductive substrate comprises a transparent underlay, grid electrodes closely adjacent to the transparent underlay and arranged on the transparent underlay at intervals, and a conductive layer coated on the transparent underlay and coating the grid electrode, wherein the transparent underlay is a transparent substrate or a transparent polymer substrate. The width of the grid electrode is 2-100 microns and the interval between the two adjacent grid electrodes is 500-800 microns. The conductive layer is a transparent conductive layer and an ITO conductive layer, an ATO conductive layer or an FTO conductive layer is selected preferably. By distributing grid electrodes at intervals on the transparent underlay of the conductive substrate and adopting the structural design that the grid electrodes are coated by the conductive layer, the invention quickens the transmission speed of the electrons in the large-area dye-sensitized solar cell of the conductive substrate and reduces the loss of the electrons in the transmission process, thus realizing the large area and practicability of the dye-sensitized solar cell.

An optical device includes a movable portion and a fixed portion having a first light reflection portion. The movable portion has a second light reflection portion facing the first light reflection portion with a first gap. The first and second light reflection portions are configured to reflect light repeatedly between the first and second light reflection portions so as to cause interference and emit light having a wavelength corresponding to a size of the first gap. The optical device also includes a first electrode portion fixed to the fixed portion so as to face a surface of the movable portion near the first light reflection portion with a second gap between the movable portion and the first electrode portion. The optical device has a second electrode portion fixed to the fixed portion so as to face another surface of the movable portion with a third gap between the movable portion and the second electrode portion. One of the first and second electrode portions serves as a detection electrode for detecting a capacitance between the movable portion and the detection electrode. Another of the first and second electrode portions serves as a drive electrode. The optical device includes a circuit operable to generate a potential difference between the movable portion and the drive electrode so as to generate an electrostatic attraction force therebetween for changing a position and/or a posture of the movable portion.

The invention provides a clamp type film stretching device. The fracture of film caused by the increase of the elongation ratio can be suppressed. The clamp type film stretching device has left and right clamps of variable pitch type. The left and right clamps grip the left and right ends of the film to be stretched and travels in the stretching region, and the clamp spacing in the longitudinal direction varies with the travel, and the clamps grip positions of the film at a distance of 20 mm or more from the left and right end edges.

The invention discloses a gas protective cover device for a laser clad coaxial powder feeding gun, and relates to the technical field of laser material processing. The gas protective cover device comprises a protective cover shell, a protective cover inner core and a porous copper plate strip, wherein the protective cover shell sleeves the outer side of the protective cover inner core; the porouscopper plate strip is arranged at the lower end of the protective cover shell; a first cavity is formed by the inner side surface of the protective cover shell, the outer side surface of the protective cover inner core and the upper surface of the porous copper plate strip; one end of the first cavity is arranged to communicate with the outer side face of the protective cover shell through a firstthrough hole, and the other end of the first cavity communicates with the lower surface of the porous copper plate strip through the porous copper plate strip; and the porous copper plate strip is configured to slow down the flow velocity of airflow penetrating through the porous copper plate strip. Through the implementation of the gas protective cover device, a solidified cladding layer can beprotected from being oxidized, the airflow of a protective gas layer can be optimized, oxygen brought by gas turbulence is reduced, and the oxidation of a coating is avoided.

An electroluminescent device (10) comprises a pair of anode (12) and cathode (13) arranged opposite to each other and one or more light-emitting layers (14) which are formed between the anode and the cathode. At least one of the light-emitting layers (14) is composed of a phosphor layer (16) and a wide band gap semiconductor layer (15). The semiconductor layer or the phosphor layer constituting the light-emitting layer may be a partially discontinuous layer.