Gallium-nitride-based light-emitting diode with silver nanowire transparent electrode and manufacturing method of gallium-nitride-based light-emitting diode

Abstract

The invention discloses a gallium-nitride-based light-emitting diode with a silver nanowire transparent electrode. The gallium-nitride-based light-emitting diode comprises a substrate, an epitaxial layer, a nano film, a silicon dioxide layer, a P electrode and an n electrode, wherein the epitaxial layer is manufactured on the substrate, and a platform surface is formed at one side of the epitaxial layer; the epitaxial layer is used for excitation, light emitting and electric injection; the nano film grows on the epitaxial layer and is used as a current expansion layer; the silicon dioxide layer is manufactured at one ends of the epitaxial layer and the nano film, and covers a part of the upper surface of the nano film; the P electrode is manufactured on the nano film; and the n electrode is manufactured on the platform surface of the epitaxial layer. The method has the characteristics of simple process, convenience in operation and high efficiency and the like, and simultaneously the gallium-nitride-based light-emitting diode can replace the traditional ITO (Indium Tin Oxide) as a novel transparent electrode of an LED (Light-Emitting Diode). The invention has the advantages that not only can the cost be reduced, but also the large-area and industrial production can be realized simultaneously.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lighting, in particular to a gallium nitride-based light-emitting diode with a silver nanowire transparent electrode and a manufacturing method thereof. Background technique [0002] Gallium nitride is a third-generation semiconductor material with a bandgap of 3.4ev. Because of its stable properties and a direct bandgap luminescent material with a wavelength of blue-violet light, it is ideal for manufacturing blue-violet light-emitting diodes (LEDs) with high mobility. For high-rate transistor materials, National Semiconductor Lighting lists gallium nitride materials as the center. Since the doping concentration of P-GaN material is only 10 18 -10 19 cm -3 , The ohmic contact of P-GaN usually uses ITO (indium tin oxide) as a transparent conductive layer to make up for the lack of current expansion caused by the lack of p-GaN doping concentration. However, ITO (indium tin oxide) itself c...

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Problems solved by technology

However, ITO (indium tin oxide) itself contains the rare metal indium, and the content of indium on the earth is limited and non-renewable

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