Method of preparing large-area crack-free thick-film photonic crystal on porous substrate

A technology for photonic crystals and porous substrates is applied in the field of preparing large-area crack-free thick-film photonic crystals, which can solve problems such as cracks, and achieve the effects of simple process, low cost and wide application range.

Active Publication Date: 2020-04-10
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a method for preparing a large-area crack-free thick-film photonic crystal on a porous substrate in order to overcome the above-mentioned defects in the prior art, which solves the problem of cracks in the preparation of large-area photonic crystals in the prior art. technical issues

Method used

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  • Method of preparing large-area crack-free thick-film photonic crystal on porous substrate
  • Method of preparing large-area crack-free thick-film photonic crystal on porous substrate
  • Method of preparing large-area crack-free thick-film photonic crystal on porous substrate

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Effect test

Embodiment 1

[0040] The method for preparing a silicon dioxide photonic crystal thick film with a thickness of 50 μm using a 500-mesh stainless steel mesh as a substrate is as follows:

[0041] 1) Take 1.0 g of silicon dioxide monodisperse microspheres with a particle size of 300 nm in a beaker, add 50 ml of absolute ethanol, and ultrasonically disperse for 30 min to form a uniform suspension with a mass concentration of 0.2%;

[0042] 2) take an area of ​​4cm 2 The 500-mesh stainless steel wire mesh was cleaned in absolute ethanol and acetone and placed in a drying oven to dry;

[0043] 3) Put the stainless steel wire mesh in the suspension, put it in an oven at 50°C, wait for 5 hours until the solvent of the suspension is completely volatilized, and then take it out to prepare a thick film of silicon dioxide photonic crystal with a thickness of 50 μm , and there is no crack on the surface, such as figure 1 shown.

Embodiment 2

[0045] The method for preparing a 250 μm silicon dioxide photonic crystal thick film with a 150-mesh titanium mesh as a substrate is as follows:

[0046] 1) Take 2.0 g of silicon dioxide monodisperse microspheres with a particle size of 300 nm in a beaker, add 50 ml of absolute ethanol, and ultrasonically disperse for 30 minutes to form a uniform suspension with a mass concentration of 1%;

[0047] 2) take an area of ​​4cm 2 The 500-mesh stainless steel wire mesh was cleaned in absolute ethanol and acetone and placed in a drying oven to dry;

[0048] 3) Put the titanium mesh in the suspension and put it in an oven at 50°C. After 5 hours, until the solvent of the suspension is completely volatilized, then take it out to prepare a 250 μm thick film of silicon dioxide photonic crystal, and the surface no cracks as figure 2 shown.

Embodiment 3

[0050] The method for preparing a polystyrene photonic crystal thick film with a thickness of 170 μm using carbon fiber paper as a substrate is as follows:

[0051] 1) Take 0.5g of polystyrene monodisperse microspheres with a particle size of 500nm in a beaker, add 200ml of deionized water, and ultrasonically disperse for 30min to form a uniform suspension with a mass concentration of 5%;

[0052] 2) take an area of ​​4cm 2 Carbon fiber paper with a thickness of 170 μm was washed in absolute ethanol and acetone respectively, and then dried in a drying oven;

[0053] 3) Put the carbon fiber paper in the suspension and put it in an oven at 55°C. After 24 hours, until the solvent of the suspension is completely volatilized, then take it out to prepare a 170 μm polystyrene photonic crystal thick film, and the surface no cracks as image 3 shown.

[0054] The reflection peak of the photonic crystal thick film is tested by a UV-visible spectrophotometer, and the result shows that...

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Abstract

The invention relates to a method of preparing a large-area crack-free thick-film photonic crystal on a porous substrate. various porous substrates are adopted and are put into turbid liquid preparedfrom monodisperse microspheres, and the monodisperse microspheres are arranged into a photonic crystal structure in holes of the substrate along with solvent volatilization by using a vertical sedimentation self-assembly method. Compared with the prior art, by changing the thickness of the substrate and the concentration of the turbid liquid, preparation of the photonic crystal with the thicknessranging from 20 mum to 650 mum is achieved, by adjusting the area of the substrate, preparation of the photonic crystal with the area ranging from 0.1 cm<2> to 100 cm<2> is achieved, and no obvious cracks exist on the surface of the photonic crystal.

Description

technical field [0001] The invention relates to the field of photonic crystal preparation, in particular to a method for preparing a large-area crack-free thick-film photonic crystal on a porous substrate. Background technique [0002] Materials with a photonic band-gap (Photonic Band-Gap) are also called photonic crystals, which refer to a class of materials whose dielectric constant (refractive index) changes periodically on the submicron scale. The concept of photonic crystals was first proposed independently by Yablonovitch and John in 1987. It was derived from the analogy of the traditional crystal concept: in a crystal, the size is 10 - 10 The periodic arrangement of atoms in m can diffract X-rays; in photonic crystals, the size is 10 -7 The periodic structure of m can diffract visible light. In 1999, American Science magazine listed photonic crystals as one of the six research hotspots in the future, which heralded the broad prospect of photonic crystal research. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/04C30B7/06C30B29/64C30B29/18C30B29/54
CPCC30B7/04C30B7/06C30B29/18C30B29/54C30B29/64
Inventor 胡晓斌蔡子贺林升炫肖佳佳
Owner SHANGHAI JIAO TONG UNIV
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