Preparation method of polycrystalline diamond compact covered by strong-combination chemical vapor deposition (CVD) diamond layer

A polycrystalline diamond and diamond layer technology, applied in the fields of materials, machinery and tools, can solve the problems of lack of effective cooperation, shear stress sensitivity, large diamond particles, etc., to improve service life and work efficiency, prevent cracks and wear resistance The effect of decreasing, improving high temperature resistance and wear resistance

Active Publication Date: 2013-01-09
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

The CVD diamond layer is pure polycrystalline diamond, so the high temperature resistance has been improved, but the quality of the diamond layer deposited by CVD method in these two schemes is difficult to guarantee
Covering the surface of the workpiece with a CVD diamond layer will be difficult to solve the problem of uneven deposition on the complex surface and insufficient bonding force between the CVD diamond layer and the surface of the workpiece
At the same time, because the CVD diamond layer grown in this way has no selective orientation, and there is no effective coordination between grains and grains, the strength and hardness of the CVD diamond layer itself are also very limited; , but the diamond particles in the PCD layer are very large, and the grains are easy to re-grow when the CVD diamond layer is deposited, which reduces the bonding force between the PCD layer and the PCD layer.
Moreover, the PCD surface as the deposition substrate also contains many impurities. As the CVD diamond layer grains deposited on the PCD grow continuously, there will be large gaps between the grains. The shear stress generated in the working engineering is very sensitive, and it is easy to cause the entire CVD diamond layer to fail under the condition of large shear stress

Method used

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  • Preparation method of polycrystalline diamond compact covered by strong-combination chemical vapor deposition (CVD) diamond layer

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Embodiment 1

[0031] A method for preparing a polycrystalline diamond composite sheet covered with a strongly bonded CVD diamond layer for drilling. Drill bits for oil drilling have rigid requirements on the service life of the drill teeth (usually it is hoped that the drill bit will not be replaced for one drilling). Pre-PCD must be acid-washed to remove Co and other metal elements.

[0032] Specific steps are as follows:

[0033] (1) Prepare a CVD diamond self-supporting film with a diameter of 60 mm and a thickness of 2.3 mm using DC arc plasma CVD technology, and remove the film;

[0034] (2) Use a laser cutting machine to cut the CVD diamond self-supporting film into small cylinders with a diameter of 1mm and a height of 2.3mm along its growth direction;

[0035] (3) Embed 10-1000 CVD diamond small cylindrical cores facing outward into diamond powder and press them together with the cemented carbide substrate to form a blank, then hot-press sinter in a hydrogen-reducing atmosphere, a...

Embodiment 2

[0041] A method for preparing a polycrystalline diamond composite sheet covered with a strongly bonded CVD diamond layer for cutting tools. Knives are consumable and can be coated with thinner CVD diamond layers, so there is an option to deposit CVD diamond films at lower temperatures and slower deposition rates, eliminating the need for pickling of the PCD.

[0042] Specific steps are as follows:

[0043] (1) Prepare a CVD diamond self-supporting film with a diameter of 100 mm and a thickness of 3 mm using DC arc plasma CVD technology, and remove the film;

[0044] (2) Use a laser cutting machine to cut the CVD diamond self-supporting film into small cylinders with a diameter of 1.5mm and a height of 3mm along its growth direction;

[0045] (3) Embed 10-1000 CVD diamond small cylindrical cores facing outward into diamond powder and press them together with the cemented carbide substrate to form a blank, then hot-press sinter in a hydrogen-reducing atmosphere, and anneal to e...

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Abstract

The invention discloses a preparation method of a polycrystalline diamond compact covered by a strong-combination chemical vapor deposition (CVD) diamond layer and belongs to the field of materials, machinery and tools. By means of the method, direct current arc plasma CVD technology can be utilized to precipitate the strong-combination high-quality CVD diamond layer on the surface of the polycrystalline diamond layer by implanting CVD diamond small cylinders with nucleation surface facing outwards in the polycrystalline diamond layer. After the compact is covered by the strong-combination CVD diamond layer, the novel polycrystalline diamond compact greatly improves high temperature resistance and abrasion resistance. The improved polycrystalline diamond compact meets requirements for drilling efficiency and machining efficiency which are higher and higher in the fields of petroleum and geological drilling and machining.

Description

[0001] Technical field [0002] The invention relates to a polycrystalline diamond composite sheet covered with a strongly bonded CVD diamond layer and its preparation method. The preparation method combines the advantages of powder metallurgy, chemical vapor deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) technology, and belongs to materials, Machinery and tools field. [0003] Background technique [0004] Polycrystalline Diamond Compact (hereinafter referred to as PDC compact) is a composite material composed of polycrystalline diamond (Polycrystalline Diamond, hereinafter referred to as PCD) covered on the surface of a cemented carbide substrate. PDC composite sheet has the advantages of high wear resistance of polycrystalline diamond layer and toughness and weldability of cemented carbide, so it becomes an efficient cutting tool material and excellent wear-resistant material, and is widely used in petroleum and geological drilling and machining ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F7/04C30B25/02C30B29/04C23C16/27
Inventor 李成明刘盛魏俊俊黑立富
Owner UNIV OF SCI & TECH BEIJING
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