Method for improving carrier mobility of metal oxide semiconductor (MOS) device and manufacturing method for MOS device
A technology of carrier mobility and MOS devices, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as increasing process complexity and achieve the effect of improving carrier mobility
Inactive Publication Date: 2012-03-21
SHANGHAI HUALI MICROELECTRONICS CORP
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[0003] At present, in order to improve the carrier mobility of CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) transistors, the industry usually introduces stress engineering into the manufacturing process or uses different semiconductor material channels, but these methods greatly increase the process complexity. Spend
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[0024] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
[0025] figure 1 A flow chart of a method for improving carrier mobility of a MOS device according to an embodiment of the present invention is schematically shown.
[0026] Such as figure 1 As shown, the method for improving the carrier mobility of a MOS device according to an embodiment of the present invention includes: a gate oxide layer forming step S1, a nitriding step S2, an annealing step after nitriding S3, a gate forming step S4, and nitrogen implantation Step S5.
[0027] The following will combine figure 1 and refer to Figure 2 to Figure 7 Describe each step in detail.
[0028] In the gate oxide layer forming step S1 , a gate oxide layer 4 is formed on the device region ( 2 , 3 ) of the substrate 1 . The device region includes ...
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The invention provides a method for improving the carrier mobility of a metal oxide semiconductor (MOS) device and a manufacturing method for the MOS device. The method for improving the carrier mobility of the MOS device comprises: a gate oxide layer forming step of forming a gate oxide layer on the device area of a substrate; a nitridation step of performing decoupled plasma nitridation on a device structure, wherein the time and / or power of a decoupled plasma nitridation process are / is regulated to make the distribution of nitrogen in the gate oxide layer away from a silicon dioxide (SiO2)-Si substrate interface; a post nitridation annealing step of performing post nitridation annealing after the nitridation step, wherein the time and / or temperature of the post nitridation annealing are / is controlled to make the distribution of the nitrogen in the gate oxide layer away from the SiO2-Si substrate interface; a gate formation step of forming the gate of a P-channel metal oxide semiconductor (PMOS) device and the gate of an N-channel metal oxide semiconductor (NMOS) device; and a nitrogen element implantation step of covering an area in which the PMOS device is to be manufactured by utilizing a mask, exposing an area in which the NMOS device is to be manufactured and performing nitrogen element implantation after the mask is arranged.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a method for improving the carrier mobility of a MOS device and a method for manufacturing a MOS device using the method for improving the carrier mobility of the MOS device. Background technique [0002] The semiconductor manufacturing industry has been committed to improving the carrier mobility of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, hereinafter referred to as MOS device). [0003] At present, in order to improve the carrier mobility of CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) transistors, the industry usually introduces stress engineering into the manufacturing process or uses different semiconductor material channels, but these methods greatly increase the complexity of the process. Spend. [0004] Therefore, it is desirable to provide a method that can improve the carr...
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IPC IPC(8): H01L21/8238H01L21/336
Inventor 谢欣云黄晓橹陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP