Method for improving carrier mobility of PMOS (P-channel Metal Oxide Semiconductor) device
A carrier mobility and device technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to improve performance, increase mobility, and improve carrier mobility
Active Publication Date: 2015-06-17
SHANGHAI HUALI MICROELECTRONICS CORP
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[0002] In the field of semiconductor manufacturing, improving the carrier mobility of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has always been a hot topic; Semiconductor material channels and other methods to improve the mobility of carriers (electrons) in N-channel field-effect transistors (Negative Channel Metal-Oxide-Semiconductor, PMOS for short), but these methods greatly increase the complexity of the manufacturing process
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[0018] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
[0019] like Figure 1-3 As shown, a method for improving the carrier mobility of a PMOS device. First, a rapid thermal oxidation (Rapid Thermal Oxidation) or in-situ water gas generation (In Situ Steam Generation, ISSG) process is used on a silicon substrate 1, Growing a base oxide layer 2 covering the silicon substrate 1, the base oxide layer 2 is made of silicon dioxide (SiO 2 ); according to the final desired gate oxide electrical thickness target, the thickness of the base oxide layer 2 is controlled by optimizing the oxidation time of the base oxide layer 2; wherein, the thickness of the base oxide layer 2 is 7-15A.
[0020] Secondly, use soft plasma for decoupled plasma nitriding (Decoupled Plasma Nitriding, referred to as DPN) process 3, using a dose of 2E15atom / cm 2 -8E15atom / cm 2 The nitrogen (nitrogen) nitrides the base oxide layer 2 i...
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The invention relates to the field of semiconductor manufacturing, in particular to a method for improving carrier mobility of a PMOS (P-channel Metal Oxide Semiconductor) device. The method for improving the carrier mobility of the PMOS device, disclosed by the invention, comprises the following steps of: controlling the thickness of an oxide layer by optimizing oxidation time of silica oxide according to an electrical thickness target of a finally required gate oxide in a process of preparing the gate oxide; and regulating the time or power of a decoupling plasma nitriding process, and precisely optimizing the time of a fast nitriding annealing process so that nitrogen in a substrate oxide layer keeps off from a contact surface of the nitrogen and a silicon substrate, thereby improving the mobility of holes and further improving performances of PMOS transistors.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving carrier mobility of a PMOS device. Background technique [0002] In the field of semiconductor manufacturing, improving the carrier mobility of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has always been a hot topic; Semiconductor material channels and other methods are used to improve the mobility of carriers (electrons) in N-channel field-effect transistors (Negative Channel Metal-Oxide-Semiconductor, PMOS for short), but these methods greatly increase the complexity of the manufacturing process. Contents of the invention [0003] The invention discloses a method for improving carrier mobility of a PMOS device, which includes the following steps: [0004] Step S1: After growing a base oxide layer on a silicon substrate, nitriding the base oxide layer by using a decoupling plasma nitriding process; [0005] Step S2: using a rap...
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IPC IPC(8): H01L21/336H01L21/28H01L21/3105
Inventor 谢欣云陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP