Method of improving carrier mobility of NMO (N-Mental-Oxide-Semiconductor) device
A carrier mobility and device technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of improving mobility, improving carrier mobility, and improving performance
Active Publication Date: 2015-05-20
SHANGHAI HUALI MICROELECTRONICS CORP
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[0002] In the field of semiconductor manufacturing, improving the carrier mobility of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has always been a hot topic; Semiconductor material channels and other methods to improve the mobility of carriers (electrons) in N-channel field-effect transistors (Negative Channel Metal-Oxide-Semiconductor, NMOS for short), but these methods greatly increase the complexity of the manufacturing process
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[0018] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
[0019] Such as Figure 1-3 As shown, a method for improving the carrier mobility of NMOS devices, firstly, adopting Rapid Thermal Oxidation or In Situ Steam Generation (ISSG) process on the silicon substrate 1, Growing a base oxide layer 2 covering the silicon substrate 1, the base oxide layer 2 is made of silicon dioxide (SiO 2 ); according to the final desired gate oxide electrical thickness target, the thickness of the base oxide layer 2 is controlled by optimizing the oxidation time of the base oxide layer 2; wherein, the thickness of the base oxide layer 2 is 7-15A.
[0020] Secondly, use soft plasma for decoupled plasma nitriding (Decoupled Plasma Nitriding, referred to as DPN) process 3, using a dose of 2E15atom / cm 2 -8E15atom / cm 2 The nitrogen (nitrogen) nitrides the base oxide layer 2 into a silicon nitride oxide (SiON) layer 4 .
[00...
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The invention relates to the field of semiconductor manufacture, in particular to a method of improving the carrier mobility of a NMO (N-Mental-Oxide-Semiconductor) device. The method of improving the carrier mobility of the NMO (N-Mental-Oxide-Semiconductor) device disclosed by the invention comprises the following steps of: controlling the thickness of an oxidation layer by optimizing oxidation time of silicon-based oxide in a gate oxide preparing process according to the targets of electrical property and thickness of finally required gate oxide, then leading a small quantity of nitrogen to exist on a substrate oxide layer and a silicon substrate contact surface so as to increase the mobility of electrons of the substrate oxide layer and the silicon substrate contact surface by adjusting the time or power of a decoupling plasma nitriding process and accurately optimizing the time of a rapid nitridation annealing technology, thereby improving the performance of a NMO transistor.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving carrier mobility of an NMOS device. Background technique [0002] In the field of semiconductor manufacturing, improving the carrier mobility of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has always been a hot topic; Semiconductor material channels and other methods are used to improve the mobility of carriers (electrons) in N-channel field-effect transistors (Negative Channel Metal-Oxide-Semiconductor, NMOS for short), but these methods greatly increase the complexity of the manufacturing process. Contents of the invention [0003] The invention discloses a method for improving carrier mobility of an NMOS device, which includes the following steps: [0004] Step S1: After growing a base oxide layer on a silicon substrate, nitriding the base oxide layer by using a decoupling plasma nitriding process; [0005] Step S2: using a r...
Claims
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IPC IPC(8): H01L21/336
Inventor 谢欣云陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP