Laser assisted device alteration using two-photon absorption
一种激光束、激光源的技术,应用在缺陷分析领域,能够解决高峰值电源等问题,达到高缺陷定位、高分辨率的效果
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[0019] The embodiment of the present invention utilizes LADA technology to accurately inject carriers into the IC by applying two-photon absorption (TPA) to realize defect localization. To generate TPA, embodiments of the present invention use a femtosecond pulsed laser of appropriate energy. The technique is based on two photons arriving simultaneously at a focal point in a transistor such that the total energy of the photons is greater than that required to generate an electron-hole pair. Two-photon excitation requires excitation using femtosecond laser pulses with photon energies smaller than the bandgap of the semiconductor under test. More specifically, the incident laser photon energy is precisely set to be equal to or greater than half the material's bandgap. Because two-photon absorption is quadratically proportional to peak intensity, the signal is strongly localized to the laser focus, with direct improvements in defect localization and image resolution over single-...
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