Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method and device of channel double-diffusion metal oxide semiconductor

A technology for oxidizing semiconductors and manufacturing methods, which are used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Active Publication Date: 2013-08-14
CSMC TECH FAB2 CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, it is necessary to provide a trench double-diffused metal oxide semiconductor manufacturing method for the high probability of failure caused by source-drain soft breakdown.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method and device of channel double-diffusion metal oxide semiconductor
  • Manufacturing method and device of channel double-diffusion metal oxide semiconductor
  • Manufacturing method and device of channel double-diffusion metal oxide semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] By adding a heat treatment step in the process of the backside of the wafer, the probability of soft breakdown failure of the trench (trench) double diffused metal oxide semiconductor (Double Metal Oxide Semiconductor DMOS) is reduced or does not occur through heat treatment, and then Obtain high quality wafer products.

[0028] Such as Figure 1-7 As shown, a trench double-diffused metal oxide semiconductor manufacturing method includes the following steps:

[0029] First, step S110, doping the back of the wafer, controlling a certain energy to implant atoms or ions into the back of the wafer, so as to form a surface layer with special properties in the selected area to achieve the purpose of doping.

[0030] Step S120 , sticking a protective tape on the front side of the wafer, the thickness of the protective tape is greater than or equal to the difference between the minimum grinding thickness limit of the grinding device and the predetermined wafer thickness. The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a manufacturing method and a device of a channel double-diffusion metal oxide semiconductor. The manufacturing method comprises the following steps of: doping; glue-injecting and grinding; etching; cleaning; heat treatment; and spattering. In a treatment process on the back, after the heat treatment process is adopted, the situation that the source and drain (source electrode and drain electrode) soft breakdown failure does not occur in the channel double-diffusion metal oxide semiconductor is effectively improved by detecting the data of a wafer. Meanwhile, the adopted device can be realized correspondingly by the existing high-temperature furnace without specially purchasing new equipment or special equipment, so that the cost is saved, and the economic benefit is improved.

Description

【Technical field】 [0001] The invention relates to a method and device for manufacturing a semiconductor device, in particular to a method and device for manufacturing a trench double-diffused metal oxide semiconductor. 【Background technique】 [0002] With the rapid development of science and technology, electronics and semiconductor technology have also been developed rapidly. A large number of electronic components manufactured by semiconductor technology are used in communication, office, business and other fields, such as computers, mobile phones, televisions, etc. With the development of the economy, the demand for electronic components in the above fields has been increasing, and there has also been a demand for these products to become smaller, easier to carry, and more flexible. [0003] As the size of these products continues to decrease, the components that make up these products must also become smaller. The corresponding integrated circuit size and transistor si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
Inventor 陈斌刘海波樊杨侯波刘江
Owner CSMC TECH FAB2 CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com