Heat treatment apparatus

Abstract

Disclosed is a heat treatment apparatus (100) which comprises: a treatment chamber (1) in which a wafer (W) is contained; a substrate supporting unit (4) for horizontally supporting the wafer (W) within the treatment chamber (1); and a lamp unit (3) that is provided above the treatment chamber (1). The lamp unit (3) comprises: a base member (40); a plurality of lamps (45) that are provided on the lower surface of the base member (40) with the front ends facing down; a plurality of ring-shaped reflectors (41, 42, 43) that are concentrically provided on the lower surface of the base member (40) so as to project downward; and a cooling head (47) for supplying a cooling medium into the reflectors (41, 42, 43). At least some of the plurality of lamps (45) are arranged along the reflectors (41, 42, 43), and cooling medium channels (68), each of which is composed of a ring-shaped space, are provided within the reflectors (41, 42, 43) in the arrangement direction of the reflectors.

Description

technical field [0001] The invention relates to a heat treatment device capable of rapid heating and rapid cooling of a substrate. Background technique [0002] In the manufacture of semiconductor devices, various heat treatments such as film formation treatment, oxidation diffusion treatment, modification treatment, and annealing treatment are performed on a semiconductor wafer (hereinafter simply referred to as wafer) as a substrate to be processed. Among these heat treatments, especially annealing treatment for removing strain after film formation and annealing treatment after ion implantation, the temperature tends to be raised and lowered at a high speed from the viewpoint of improving throughput and suppressing diffusion to a minimum. As such a heat treatment apparatus capable of rapidly raising and lowering the temperature, an apparatus using a lamp typified by a halogen lamp as a heating source is often used. [0003] As a heat treatment device using such a lamp, a ...

AI Technical Summary

Problems solved by technology

[0004] In the technique described in the aforementioned Japanese Patent Laid-Open No. 2002-64069, since the arrangement density of the lamps and the luminous density of each lamp are limited, the heating efficiency is insufficient.

[0005] In addition, in the technique described in the above-mentioned U.S. Patent No. 5,840,125, since the lamps are arranged vertically, the arrangement density of the lamps can be increased. wafer, so a high percentage of heat is absorbed on the light pipe side, and the energy efficiency is not good

In addition, the temperature of the light guide as a reflector increases significantly due to the light received from the lamp, so it is necessary to cool the light guide by flowing a cooling medium such as cooling water between the light guides. Since the light guide is installed for each lamp, the light guide The flow of the cooling medium is blocked, and the conductance of the cooling water flow path becomes low, and efficient cooling cannot be performed. In order to ensure sufficient cooling, the supply pressure of the cooling water needs to be increased

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