Selective plasma nitriding method and plasma nitriding device
A technology of plasma and nitriding treatment, which is applied in the direction of transistors, electric solid-state devices, semiconductor devices, etc., can solve problems such as unreachable, high nitriding rate, and difficulty in obtaining uniformity of nitriding treatment, so as to prevent electrical interference and reliable sex good effect
Inactive Publication Date: 2012-04-11
TOKYO ELECTRON LTD
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Problems solved by technology
As a result, there is a problem that the desired high nitriding rate and high nitrogen concentration (nitrogen dose) cannot be achieved.
In addition, as the pressure of the plasma treatment is increased, the distribution of the plasma is shifted to one side, and there is a problem that it is difficult to obtain the uniformity of the nitriding treatment in the substrate surface.
Method used
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[0040] Hereinafter, embodiments of the selective plasma nitriding treatment method of the present invention will be described in detail with reference to the drawings. First, refer to Figure 1 ~ Figure 3 , the outline of the selective plasma nitriding treatment method according to this embodiment will be described. figure 1 A cross section of a semiconductor wafer (hereinafter referred to as "wafer") W as an object to be processed in the selective plasma nitridation treatment of the present invention is shown. The silicon layer 60 and SiO as a silicon compound layer are exposed on the wafer W. 2Layer 61. Among them, examples of the silicon layer 60 include single crystal silicon, polycrystalline silicon, and the like.
[0041] By exposing the wafer W to the nitrogen-containing plasma, the Si surface 60 a of the silicon layer 60 is plasma-nitrided by active radicals (mainly N ions) in the nitrogen-containing plasma. At this time, the Si surface 60a and the SiO surface 60a ...
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Abstract
Disclosed is a method for selectively plasma nitriding silicon at a high nitriding rate and a high nitrogen dose amount on an object to be treated in which a silicon surface and a silicon compound layer have been exposed. The selective plasma nitriding is performed by setting a treatment pressure in the range of 66.7 Pa to 667 Pa and supplying 0.1 W / cm2 to 1.2 W / cm2 of high-frequency power per unit area of the object to be treated from a high-frequency power source (44) to the electrode (42) of a carrying table (2). A bias voltage is applied to a wafer (W) by means of the high-frequency power, and high Si / SiO2 selectivity is obtained.
Description
technical field [0001] The invention relates to a selective plasma nitriding treatment method and a plasma nitriding treatment device. Background technique [0002] In the manufacturing process of a semiconductor device, silicon is nitrided by plasma to form a silicon nitride film. On the substrate, in addition to the silicon surface to be subjected to the plasma nitridation treatment, a silicon compound layer formed in a previous process is usually mixed. In the case where multiple types of films are mixed in this way, the entire exposed surface is exposed to plasma when plasma nitridation is performed, and therefore, nitrogen-containing layers are formed even in portions that do not require nitridation. For example, when silicon is nitridated, there is a silicon oxide film (SiO 2 film) is also nitrided together with silicon, and is changed to a silicon oxynitride film (SiON film). [0003] However, in the manufacturing process of the semiconductor device, if the target ...
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IPC IPC(8): H01L21/318H01L21/8247H01L27/115H01L29/788H01L29/792
CPCH01L29/518H01L29/7881C23C8/04C23C8/36H01L21/02247H01L27/11521H01L29/513H01L21/0217H01L21/28273H01L21/76232H01L21/3211H01J37/32082H01J2237/3387H01L21/76224H01L29/40114H10B41/30H01L21/02274
Inventor 门田太一中村秀雄北川淳一
Owner TOKYO ELECTRON LTD