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Method for reforming photo-resist pattern

A technology of photoresist and photoresist layer, which is applied in the direction of photo-engraving process, optics and opto-mechanical equipment of the pattern surface, which can solve the problems of damage to the base material and increase of cost.

Active Publication Date: 2013-06-05
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using this method will undoubtedly greatly increase the cost of production, and it is also easy to cause damage to the base material

Method used

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  • Method for reforming photo-resist pattern
  • Method for reforming photo-resist pattern
  • Method for reforming photo-resist pattern

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Embodiment Construction

[0055] In order to make the object, technical solution and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0056] The present invention provides a method for re-forming a photoresist pattern, in which, since a deposition process and an etching process are added between the photoresist layer redoing process and the photoresist layer recoating process, the The surface of the HM layer is roughened to increase the adhesion of the PR layer formed on the surface of the HM, thereby effectively eliminating pattern peeling, improving the electrical properties of the formed semiconductor components, and greatly reducing production costs.

[0057] In an embodiment of the present invention, before using the method for forming a photoresist pattern in the present invention, a commonly used method for forming a photoresist pattern can be used to form a p...

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Abstract

The invention provides a method for reforming a photo-resist pattern. The method comprises the following steps of: removing a formed photo-resist pattern through a photo-resist layer reforming process; forming a deposition layer with a rough surface on a hard mask layer through a deposition process; removing the deposition layer through an etching process to realize roughening of the surface of the hard mask layer; recoating a photo-resist layer on the roughened hard mask layer through a photo-resist layer recoating process; and sequentially exposing, developing and cleaning the photo-resist layer to reform a new photo-resist pattern. By using the method, a pattern stripping phenomenon can be effectively eliminated, the electrical performance of a formed semiconductor component is improved, and the production cost is greatly lowered.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor components, in particular to a method for re-forming photoresist patterns. Background technique [0002] In the manufacturing process of semiconductor components, it is often necessary to produce extremely fine-sized circuit structure patterns (patterns) on the wafer substrate to form various types of complex semiconductor components and complete corresponding electronic functions. With the rapid improvement of chip integration, the size of semiconductor components is getting smaller and smaller, and the manufacturing industry is becoming more and more sophisticated. [0003] In the prior art, when the semiconductor process enters 65nm, in order to form fine patterns on the wafer, a hard mask layer is usually formed on the surface of the wafer by using a three-layer mask technology (Tri-layer scheme) and cooperates with photolithography. The glue forms a mask pattern. [0004] fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00H01L21/027
Inventor 尹晓明孙武韩宝东符雅丽
Owner SEMICON MFG INT (SHANGHAI) CORP