LED (light emitting diode) and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of epitaxial growth difficulties, different lattice constants, and affecting the luminous efficiency of light-emitting diodes, etc., to achieve diversified development flexibility, cost reduction effect
Inactive Publication Date: 2012-05-16
深圳市华之海实业有限公司
View PDF4 Cites 5 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0002] Since gallium nitride has a wide direct energy gap range, and the manufacturing process of gallium nitride is compatible with silicon technology, it is easy to form heterostructures, and its energy band structure is a direct energy gap type. It is considered the most suitable semiconductor for the development of blue light components. material, but its biggest problem is the difficulty of epitaxial growth
[0003] Generally, gallium nitride is grown on a sapphire or silicon carbide substrate to form a heterogeneous structure. The gallium nitride material grown on a sapphire substrate by epitaxial technology has a hexagonal crystal structure, and the sapphire substrate is also a hexagonal crystal. However, the lattice constants of the two are not the same, which seriously affects the luminous efficiency of the light-emitting diodes produced, and the use of sapphire substrates is expensive, which greatly increases the production cost of light-emitting diodes.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0021] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0022] See figure 1 , the light emitting diode 100 provided by the embodiment of the present invention includes a substrate 10 , a first electrode 20 , a buffer layer 30 , a gallium nitride nanowire light emitting layer 40 and a second electrode 60 stacked in sequence.
[0023] Wherein, the first electrode 20 is an aluminum-doped zinc oxide thin film, the buffer layer 30 is formed by a zinc oxide nanowire array, and the gallium nitride nanowire light-emitting layer 40 includes an N-type gallium nitride nanowire array 41 stacked in sequence. As well as the P-type GaN nanowire array 42 , the second electrode 60 covers the top of the P-type GaN nanowire array 42 .
[0024] The light emitting diode 100 further includes an insulating layer 50 located between the first electrode 20 and the second electrode 60 to fill the ZnO nanowire buffer layer 30 and the GaN na...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to an LED (light emitting diode) which comprises a substrate, a first electrode, a buffer layer, a light-emitting layer and a second electrode which are overlaid sequentially, wherein the first electrode is composed of an aluminum doped zinc oxide thin film defined on the substrate; the buffer layer is a zinc oxide nanowire array; the light-emitting layer is composed of an N-type gallium nitride nanowire array and a P-type gallium nitride nanowire array which are sequentially laminated; the second electrode covers the terminal of the P-type gallium nitride nanowire array; and the LED also comprises an insulation body filled between the first electrode and the second electrode. The invention also relates to a manufacturing method of the LED.
Description
technical field [0001] The invention relates to a light-emitting diode and a manufacturing method thereof, in particular to a light-emitting diode with glass or metal as a substrate and a manufacturing method thereof. Background technique [0002] Since gallium nitride has a wide direct energy gap range, and the manufacturing process of gallium nitride is compatible with silicon technology, it is easy to form heterostructures, and its energy band structure is a direct energy gap type. It is considered the most suitable semiconductor for the development of blue light components. material, but its biggest problem is the difficulty of epitaxial growth. [0003] Generally, gallium nitride is grown on a sapphire or silicon carbide substrate to form a heterogeneous structure. The gallium nitride material grown on a sapphire substrate by epitaxial technology has a hexagonal crystal structure, and the sapphire substrate is also a hexagonal crystal. However, the lattice constants of...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L33/18H01L33/32H01L33/12H01L33/00
Inventor 许嘉麟
Owner 深圳市华之海实业有限公司