Manufacturing method of phase change memory
A technology of phase change memory and manufacturing method, which is applied in the field of manufacturing phase change memory, can solve the problems that the working reliability of phase change memory cannot meet the application requirements, and the yield rate of phase change memory is low, so as to improve power consumption and storage capacity. speed effect
Active Publication Date: 2014-04-02
SEMICON MFG INT (BEIJING) CORP
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Problems solved by technology
[0010] In practice, it is found that the yield rate of the phase change memory manufactured by the prior art is low, and the working reliability of the phase change memory cannot meet the requirements of the application
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[0033] The yield rate of the phase-change memory manufactured in the prior art is low, and the reliability of the phase-change memory cannot meet the application requirements. Please combine figure 2 , after research by the inventors, it has been found that the phase change layer 106 and the bottom electrode 102 are easily disconnected (open) due to the low reliability of the electrical connection between the phase change layer 106 and the bottom electrode 102 in the prior art, so that the The phase change layer 106 cannot accept the phase change current from the bottom electrode 102 , so that the phase change layer 106 cannot perform phase change operation. The reason for the low reliability of the electrical connection between the phase change layer 106 and the bottom electrode 102 is that there are pollutants and natural oxide layers on the surface of the bottom electrode 102, wherein the pollutants are caused by water vapor from the clean room. , particles, organic and i...
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Abstract
The invention provides a manufacturing method of a phase change memory. The method comprises the following steps: providing a semiconductor substrate whose surface is formed with a bottom electrode and a first dielectric layer which is level with the bottom electrode; forming a second dielectric layer at a surface of the first dielectric layer, wherein, the second dielectric layer is formed with a groove inside, the groove exposes the bottom electrode below; forming a spacer at a sidewall of the groove; carrying out a precleaning treatment on the bottom electrode; carrying out insulation processing on a surface of the bottom electrode, and forming an insulating layer at the surface of the bottom electrode, wherein, the groove exposes the insulating layer; forming a phase change layer at a surface of the second dielectric layer and in the groove respectively, wherein, the phase change layer at least fills up the groove. According to the invention, yield rate of the phase change memory is raised, and reliability of working of the phase change memory is raised.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a phase-change memory. Background technique [0002] Phase Change Random Access Memory (PCRAM) technology is based on the idea that S.R. Ovshinsky proposed in the late 1960s that phase change films could be applied to phase change storage media. As an emerging non-volatile storage technology, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, unit area, and multi-value realization. Become the focus of current non-volatile memory technology research. [0003] In phase-change memory, the value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an amorphous state due to the heating effect of an applied electric current...
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IPC IPC(8): H01L45/00
Inventor 任万春向阳辉宋志棠刘波
Owner SEMICON MFG INT (BEIJING) CORP