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Method for isoepitaxial growth of SrTiO3 film by using MBE

A homoepitaxy, thin film technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem that the control accuracy cannot meet the requirements, and achieve the effect of excellent characteristics

Inactive Publication Date: 2014-11-05
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But for growing high quality SrTiO 3 Thin films, the control accuracy of these technologies is far from meeting the requirements

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  • Method for isoepitaxial growth of SrTiO3 film by using MBE
  • Method for isoepitaxial growth of SrTiO3 film by using MBE

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Embodiment 1

[0024] This embodiment provides a MBE homoepitaxial growth SrTiO 3 Thin film methods, including:

[0025] 1) Processing substrate: choose common commercially available SrTiO 3 The (110) substrate was used as the substrate, sputtered with Ar ions at a sputtering dose of 500eV / 2.0μA / 10min, and then annealed in an ultra-high vacuum at 1000°C to obtain a single-phase (4×1) restructured SrTiO 3 (110) surface, which is the SrTiO cut-off surface;

[0026] 2) SrTiO 3 (110) Film preparation: Heating the substrate to 800°C, co-depositing Ti and Sr in an oxygen atmosphere, and at the same time performing in-situ real-time monitoring of the sample by reflection-type high-energy electron diffraction, and selecting the diffraction fringes in the [001] direction (such as figure 1 Shown in the second row of ) as the characteristic diffraction fringes, the opening and closing of the baffles of the Ti source and the Sr source are controlled by the change of the pattern of the characteristic ...

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Abstract

The invention provides a method for isoepitaxial growth of a SrTiO3 film by using MBE. The method comprises the following steps: co-depositing Ti and Sr on (110) surface of a SrTiO3 substrate in an oxygen atmosphere and carrying out in-situ real-time monitoring on a sample by using reflection high energy electron diffraction (RHEED); and adjusting the ratio of Sr beam to Ti beam according to changes of a pattern of characteristic diffraction fringes of RHEED so as to allow reconstruction of the surface of the SrTiO3 film always transit on the basis of reconstruction of the surface of the SrTiO3 substrate.

Description

technical field [0001] The present invention relates to a kind of growing SrTiO 3 Thin-film methods, especially involving a homoepitaxially grown polar SrTiO with atomically precise planarity and strict stoichiometry 3 (110) Thin film method. Background technique [0002] The use of molecular beam epitaxy (MBE) technology to grow thin films can effectively reduce the defect density and obtain high-quality thin films. For example, the two-dimensional electron gas at the semiconductor GaAs / AlGaAs interface grown by molecular beam epitaxy can have a carrier mobility of up to 10. 7 cm 2 V -1 the s -1 (Document 1: D.G Schlom and L.N.Pfeiffer, Nature Mater. 9, 881 (2010)). However, the complex oxide SrTiO was prepared by molecular beam epitaxy 3 Films, encountered many challenges. The control of film composition, especially the composition of metal cations, has always been the key to the preparation of multiple oxides SrTiO by molecular beam epitaxy. 3 The key and difficul...

Claims

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Application Information

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IPC IPC(8): C30B25/16C30B25/20C30B29/32
Inventor 杨芳汪志明冯加贵郭建东
Owner INST OF PHYSICS - CHINESE ACAD OF SCI