Method for preparing zinc oxide varistors while increasing potential gradient and nonlinear coefficient

A technology of nonlinear coefficient and potential gradient, which is applied in the field of zinc oxide varistors to increase the potential gradient and nonlinear coefficient at the same time, and can solve problems such as the decrease of nonlinear coefficient

Inactive Publication Date: 2012-06-27
朱颉安 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the above-mentioned prior art for improving the potential gradient of the zinc oxide varistor has the disadvantage that once the potential gradient of the zinc oxide varistor is increased, the nonlinear coefficient thereof decreases.

Method used

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  • Method for preparing zinc oxide varistors while increasing potential gradient and nonlinear coefficient
  • Method for preparing zinc oxide varistors while increasing potential gradient and nonlinear coefficient
  • Method for preparing zinc oxide varistors while increasing potential gradient and nonlinear coefficient

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] The sintered material with code G1-10 was prepared by chemical precipitation method, and its components are listed in Table 1.

[0061] Table 1. The molar ratio of each component of the sintered material (with 1mol of ZnO)

[0062] Component (mol%)

Bi 2 o 3

MnO 2

co 2 o 3

Sb 2 o 3

Y 2 o 3

Ce 2 o 3

SiO 2

B 2 o 3

G1-10

1.50

1.00

1.00

1.00

0.003

0.003

0.50

0.005

[0063] Preparation of Doped ZnO by Soaking in Doping Ion Solution * The crystal grains, the types and ratios of doped ions are listed in Table 2.

[0064] Table 2. Doped ZnO * Each dopant ion species and molar ratio in the grain (ZnO is 1mol)

[0065] Doping ion species

sn

Si

B

Al

Ratio (mol%)

0.60

0.10

1.00

0.015

[0066] Will be doped with ZnO * After mixing the grains and G1-10 sinter powder evenly, use 1000k...

Embodiment 2

[0070] The zinc oxide grain samples listed in Table 5 doped with 1 mol% indium (In) ions were prepared by chemical co-precipitation method. The sintered material code-named G1-00 was prepared by chemical co-precipitation method, and its composition and weight ratio are listed in Table 4.

[0071] Table 4. Components of sintered material (wt%)

[0072]

[0073] According to the weight ratio of zinc oxide grain sample: G1-00 sintered material is 100:10 or 100:15 or 100:30, mix evenly, and then use 1000kg / cm 2 The pressure is pressed into a disc, and then sintered at a sintering temperature of 1065 ° C for 2 hours, and then coated with silver electrodes at 800 ° C, and a disc type zinc oxide varistor is made. The properties of various zinc oxide varistors were measured respectively, and the results are shown in Table 5.

[0074] It can be seen from Table 5 that when the zinc oxide grains are doped with the same doping ion composition, the pressure-sensitive characteristics o...

Embodiment 3

[0078] Same as Example 1, prepare G1-10 sinter powder by chemical precipitation method, and prepare doped ZnO by doping ion solution soaking method * The crystal grains were sintered at 950°C for 2 hours, and the types and ratios of doped ions are listed in Table 6.

[0079] Table 6. Doped ZnO * Each dopant ion species and molar ratio in the grain (ZnO is 1mol)

[0080]

[0081] As in Example 1, it was made into a wafer-shaped zinc oxide varistor, and its properties are listed in Table 7. Among them, the potential gradients of the zinc oxide varistors prepared with sample numbers 1 to 4 all exceeded 1200V / mm, the nonlinear characteristic α exceeded 27.41, and the leakage current I L less than 16.5µA. In particular, the potential gradient of the prepared sample number 4 zinc oxide varistor is as high as 6023V / mm.

[0082] Table 7. ZnO doped with different ions * Performance of zinc oxide varistors made of crystal grains

[0083]

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Abstract

A method for preparing zinc oxide varistors includes: firstly, preparing sufficiently semiconducted crystal grains doped with zinc oxide; secondly, mixing the crystal grains with prepared inter-crystal phase components; and finally, forming the zinc oxide varistors by the sintering process. The difference between the method for preparing zinc oxide varistors and the known method for preparing zinc oxide varistors includes that the process of preparing the sufficiently semiconducted crystal grains doped with zinc oxide and the process of preparing high-impedance sintered powder are separated from each other. The method for preparing zinc oxide varistors has the advantages of increasing the potential gradient and the nonlinear coefficient of the zinc oxide varistors simultaneously and is applicable to manufacturing the zinc oxide varistors with the potential gradient ranging from 1200-9000V / mm and the nonlinear coefficient alpha ranging from 21.5 to 55.

Description

technical field [0001] The invention relates to a method for making a zinc oxide varistor, in particular to a method for making the zinc oxide varistor increase the potential gradient and nonlinear coefficient at the same time. Background technique [0002] Zinc oxide varistor has excellent non-ohmic characteristics and is the best overvoltage protection device. It is used as a transient voltage suppressor for protecting components in power or circuit systems, and can prevent instantaneous surges and protect components. [0003] However, as countries around the world plan to move towards ultra-high voltage transmission systems in power systems, it has become an important development trend that zinc oxide varistors must have high potential gradient and high energy absorption characteristics. [0004] As we all know, the potential gradient of a zinc oxide varistor is related to the number of zinc oxide grain boundaries per unit thickness, that is, the smaller the zinc oxide gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622
Inventor 朱颉安连清宏
Owner 朱颉安
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