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Parametric modeling method of millimeter wave field effect transistor based on binary combination

A field-effect transistor and parametric modeling technology, which is applied in electrical digital data processing, special data processing applications, instruments, etc., to achieve the effects of low cost, good accuracy, and simplified modeling

Inactive Publication Date: 2013-06-19
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This model has better accuracy and can support mmWave frequency bands, but it is a fixed-size model based on specific test data

Method used

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  • Parametric modeling method of millimeter wave field effect transistor based on binary combination
  • Parametric modeling method of millimeter wave field effect transistor based on binary combination
  • Parametric modeling method of millimeter wave field effect transistor based on binary combination

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Embodiment Construction

[0026] The specific content of this method will be further described in detail below in conjunction with the accompanying drawings and examples.

[0027] The method for parameterized modeling of millimeter-wave field-effect transistors based on binary combination proposed by the present invention is characterized in that it comprises the following steps:

[0028] 1) Make a binary basic unit layout in which the total width of a plurality of millimeter-wave field effect transistors is in a binary proportional relationship; specifically include:

[0029] Under the CMOS process, a plurality of millimeter-wave field effect transistors (hereinafter referred to as transistors) with a total width W T Transistor layouts in a binary ratio (subsequent steps will use them to combine to form the required transistors) are used as binary basic unit layouts (referred to as basic units); each binary basic unit layout adopts an interdigitated structure for millimeter-wave high-frequency applica...

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Abstract

The invention relates to a parametric modeling method of a millimeter wave field effect transistor based on binary combination, which belongs to the technical field of integrated circuit design. The method comprises the following steps: making layouts of a plurality of binary basic units in binary proportion to the total width of transistors; making test layouts of the basic units and a test layout for allowing a standard structure to be embedded therein; taping out to obtain a test sample, and measuring to obtain test data for modeling; directly extracting the corresponding model of the binary basic unit layout; constructing a lead explicit parametric model for connecting the binary basic unit combination; and combining the binary basic unit model corresponding to the binary basic unit combination with lead explicit parametric model of the binary basic unit combination to obtain the parametric model of the millimeter wave field effect transistor. The method provided by the invention can improve circuit design efficiency, and further shorten circuit design time; and a high-frequency model with high accuracy can ensure the reliability of circuit simulation.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit design, and in particular relates to a method for establishing a parameterized model of a millimeter-wave field-effect transistor according to tape-out test data. Background technique [0002] Due to the rapid development of integrated circuit processing and manufacturing technology, the working speed of MOSFET (Field Effect Transistor) under CMOS (Complementary Metal Oxide Semiconductor) technology has been greatly improved, reaching the microwave work traditionally dominated by III-V compound technology. High-frequency circuits in the frequency band have requirements for transistor performance. The definition of broad microwave frequency band is usually 300MHz to 300GHz, and the existing commercial application of RFIC (radio frequency integrated circuit) of CMOS technology has been like WLAN (wireless local area network) working in 2.4GHz, 5.4GHz and other frequency bands, so in order...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 王燕唐杨
Owner TSINGHUA UNIV