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Method for preparing aluminum nitride

An aluminum nitride and aluminum powder technology, applied in the field of aluminum nitride preparation, can solve the problems of uneven ceramic layer, uneven surface reaction of aluminum-containing powder, and inability of oxygen-containing gas to flow uniformly, so as to improve the conversion rate. Effect

Inactive Publication Date: 2012-07-04
NAT CHENG KUNG UNIV
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Problems solved by technology

[0042] In addition, because the stacking density of these aluminum-containing powders is not uniform, the oxygen-containing gas introduced often cannot uniformly flow through the surfaces of these aluminum-containing powders, and the temperature of these aluminum-containing powders varies. Similarly, the surface reaction of these aluminum-containing powders is relatively uneven, so the No. I315296 patent is likely to have the problem of uneven ceramic layer formed on the surface of the aluminum powder, so that it can avoid the fusion of these aluminum-containing powders. The effect is not good, and the high conversion rate can only be achieved when a small amount of aluminum-containing powder is reacted, and the reproducibility of the high conversion rate is not good

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  • Method for preparing aluminum nitride
  • Method for preparing aluminum nitride
  • Method for preparing aluminum nitride

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Embodiment Construction

[0059] In order to make the above-mentioned and other objects, features and advantages of the present invention more comprehensible, the preferred embodiments of the present invention are specifically cited below, together with the accompanying drawings, as follows:

[0060] The preparation method of aluminum nitride provided by the present invention includes a reactant preparation step S1 to prepare a reactant, and a heating and combustion step S2 to expose the reactant to a nitrogen-containing gas, so that the nitrogen-containing gas and The reactants are sufficiently contacted and heated to produce a combustion synthesis reaction to form an aluminum nitride product. ("Nitrogen-containing gas" here refers to the gas containing "N" atoms in the chemical formula, rather than the gas containing "nitrogen".) The reactant preparation step S1 and the heating and combustion step S2 of the present invention are described in detail respectively as follows:

[0061] Reactant preparati...

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Abstract

The invention relates to a method for preparing aluminum nitride, which comprises the steps of mixing aluminum powder with a surface modifier uniformly to form a reactant and placing the reactant in a container; exposing the reactant in the container to a nitrogenous gas and heating the reactant to a temperature above 660 DEG C so as to burn the reactant, wherein during the heating process, surface modifying reaction occurs between the surface modifier and the aluminum powder to form a ceramic layer on the surface of the aluminum powder; and then burning synthesis is performed for the burning aluminum powder and the nitrogenous gas so as to form aluminum nitride.

Description

technical field [0001] The invention relates to a preparation method of aluminum nitride. Background technique [0002] Due to its superior thermal conductivity, good electrical insulation, low thermal expansion rate, good thermal shock resistance and good corrosion resistance, aluminum nitride has become an extremely important material in industry in recent years. It has great application potential in many high-tech industries, for example, it can be used as integrated circuit packaging materials and high thermal conductivity composite materials, and can also be applied to electronic substrates, high-power LED chip carriers, electronic component heat sinks or high-temperature resistant containers. make. [0003] At present, the existing preparation methods of aluminum nitride are generally divided into gas phase reaction method, organometallic precursor method, alumina powder carbon reduction nitriding method, direct nitriding method of metal aluminum, and combustion synth...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B35/622
Inventor 钟贤龙林俊男张智伟林静欣林宏颖
Owner NAT CHENG KUNG UNIV