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Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device

A wet etching and etching solution technology, which is used in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problem of ineffective edge wet etching, etching solution failure, and concentration ratio difference. It can ensure the stability, reduce the harm and prolong the service life.

Inactive Publication Date: 2012-07-11
WUXI SUNTECH POWER CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the consumption rate of various components in the etching tank is not necessarily the same, after a certain number of rehydration, the concentration ratio of each component will be greatly different from the original set value, resulting in the failure of the etching solution, that is, Ineffective edge wet etch

Method used

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  • Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device
  • Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device
  • Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0062] Nitric acid, hydrofluoric acid and H detected by the concentration detection unit 250 in step 410 2 SiF 6 The concentration of the etching solution is 37.9%, 5.5% and 0.5%, respectively, and the liquid level of the etching solution detected by the liquid level unit 280 in step 410 corresponds to the volume of the etching solution in the storage tank 230 being 20 liters. Processing unit 290 judges hydrofluoric acid and H 2 SiF 6 The concentration of the concentration is all within the target value range, so the above formula (1) will be used to calculate the amount of nitric acid with a concentration of 50% that needs to be added to be 4.2 liters according to the concentration of each component measured and the volume of the etching solution. After adding the above amount of nitric acid, the concentration of the hydrofluoric acid component became 4.55%, still within the target value range, while the H 2 SiF 6 The concentration is still lower than 1%, it can be seen t...

example 2

[0064] Nitric acid, hydrofluoric acid and H detected by the concentration detection unit 250 in step 410 2 SiF 6 The concentration of the etching solution is 41%, 3.9% and 0.8%, respectively, and the liquid level of the etching solution detected by the liquid level unit 280 in step 410 corresponds to the volume of the etching solution in the liquid storage tank 230 being 30 liters. The processing unit 290 judges H 2 SiF 6 The concentration is within the target value range, but the concentrations of nitric acid and hydrofluoric acid have deviated from their respective target value ranges, so the above formulas (1) and (2) will be used, according to the measured concentration of each component and the etching According to the volume of liquid, it is calculated that the nitric acid quantity of 50% concentration that needs to be added is 11.4 liters, and the hydrofluoric acid quantity of 30% concentration that needs to be added is 3.6 liters. After adding the above amounts of n...

example 3

[0066] Nitric acid, hydrofluoric acid and H detected by the concentration detection unit 250 in step 410 2 SiF 6 The concentration of the etching solution is 40%, 5% and 1.1%, respectively, and the liquid level of the etching solution detected by the liquid level unit 280 in step 410 corresponds to the volume of the etching solution in the liquid storage tank 230 being 20 liters. The processing unit 290 judges H 2 SiF 6 The concentration deviates from the target value range, and the concentrations of nitric acid and hydrofluoric acid are within their respective target value ranges, so the above formulas (1)-(3) will be used, according to the measured concentration of each component and the volume of the etching solution , Calculate the amount of nitric acid with a concentration of 50% that needs to be added to be 12 liters, the amount of hydrofluoric acid with a concentration of 30% that needs to be added is 2.5 liters, and the amount of deionized water that needs to be adde...

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Abstract

The invention relates to an etching liquid replenishing device, an etching liquid replenishing method and wet etching equipment with the etching liquid replenishing device. The etching liquid replenishing device disclosed by the invention comprises a liquid inlet pipe, a liquid outlet pipe, a liquid storage tank, a liquid replenishing unit, a concentration detection unit and a processing unit, wherein the liquid inlet pipe and the liquid outlet pipe are communicated with an etching tank; the liquid storage tank is communicated with the etching tank through the liquid inlet pipe and the liquid outlet pipe; the liquid replenishing unit is used for replenishing spare solutions of various components of the etching liquid to the liquid storage tank; the concentration detection unit is used for detecting concentrations of various components of at least one of the liquid storage tank, the etching tank, the liquid inlet pipe and the liquid outlet pipe; the processing unit is used for calculating volumes of the spare solutions of various components needing to be replenished into the liquid storage tank according to a concentration detection result, target concentration ranges of various components in the etching liquid, volume of the etching liquid in the liquid storage tank and concentrations of the spare solutions of various components; and the liquid replenishing unit is used for replenishing the spare solutions of various components to the liquid storage tank according to a calculation result, so that the concentrations of various components are adjusted to be in the target concentration ranges. According to the invention, stability of the concentrations of various components of the etching liquid can be effectively ensured.

Description

technical field [0001] The invention relates to wet etching technology, in particular to an etchant supply device, a supply method and wet etching equipment including the supply device. Background technique [0002] During wet etching, the silicon wafer is soaked in the prepared chemical reagent or reagent solution, so that the part of the film surface that is not masked by the resist reacts with the reagent and is removed. For example, a silicon dioxide film is etched with a solution containing hydrofluoric acid, an aluminum film is etched with phosphoric acid, and the like. This method of etching in a liquid environment is called "wet" etching. Its advantages are simple operation, low requirements for equipment, easy realization of mass production and good etching selectivity. In the currently used edge wet etching process, the edge PN junction, for example, is made of a certain concentration of nitric acid (HNO 3 ) and hydrofluoric acid (HF) etchant for etching. Durin...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/66
Inventor 马晓光何悦叶俊黄治国
Owner WUXI SUNTECH POWER CO LTD
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