Light-emitting diode structure and method for manufacturing the same
A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, electric solid-state devices, circuits, etc., and can solve problems such as the decrease in luminous efficiency of light-emitting diode components and the reduction of the effective light-emitting area of light-emitting diodes
Inactive Publication Date: 2012-07-11
CHI MEI LIGHTING TECHNOLOGY CORP +1
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In this way, not only will the effective light-emitting area of the LED be reduced, but also the luminous efficiency of the LED element will be greatly reduced.
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[0068] Please refer to Figure 2A , Figure 3A , Figure 4A and Figure 5A ,as well as Figure 2B , Figure 3B , Figure 4B , Figure 5B and Figure 2C ,in Figure 2A , Figure 3A , Figure 4A and Figure 5A ,as well as Figure 2B , Figure 3B , Figure 4B and Figure 5B It is a cross-sectional view and a top view of the manufacturing process respectively showing a light emitting diode structure according to an embodiment of the present invention. In this embodiment, when fabricating the LED structure, the LED die 200 may be provided first. In one example, such as Figure 2A and Figure 2C As shown, the LED die 200 may include a substrate 202 , and a first electrical type semiconductor layer 204 , a light emitting layer 206 , and a second electrical type semiconductor layer 208 stacked on the substrate 202 in sequence. Wherein, the first electrical property and the second electrical property are different electrical properties. For example, one of the first ...
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A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure includes a carrying component, an LED chip, a first conductivity type electrode and a second conductivity type electrode. The carrying component includes a carrier, a sidewall disposed on the carrier and forms a carrying tank. The LED chip is fixed within the carrying tank and includes a first conductivity type semiconductor layer having a first region and a second region, an active layer and a second conductivity type semiconductor layer stacked in sequence. The LED chip further includes a second conductive finger disposed on the second semiconductor layer in the first region, and a first conductive finger disposed on the first semiconductor layer in the second region. The first electrode extends on the sidewall and the first conductive finger. The second electrode extends on the sidewall and the second conductive finger.
Description
technical field [0001] The invention relates to a light-emitting element and its manufacturing method, and in particular to a light-emitting diode (LED) structure and its manufacturing method. Background technique [0002] In the manufacturing technology of light-emitting diode elements, due to the maturity of epitaxy technology and the improvement of tube core manufacturing technology, the luminous efficiency of light-emitting diodes has also been continuously improved. Therefore, the goal of high luminous efficacy can still be achieved when the size of the light emitting diode element is reduced. [0003] Please refer to figure 1 , which is a top view of a conventional LED. In the conventional light-emitting diode 100, the n-type electrode 108 is arranged on the n-type semiconductor layer 102, and the p-type electrode 110 and the p-type conductive branch (Conductive Finger) 112 are arranged on the platform 106 of the light-emitting epitaxial structure. on the semiconduc...
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IPC IPC(8): H01L33/38H01L33/44H01L33/48H01L33/60H01L33/00
CPCH01L33/486H01L33/20H01L33/44H01L33/62H01L24/24H01L2224/24247H01L2224/32245H01L2224/73267H01L2224/92244H01L2924/12041H01L2924/15153H01L2924/00
Inventor 余国辉王建钧朱长信吴浩青
Owner CHI MEI LIGHTING TECHNOLOGY CORP