Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same

A technology of acoustic wave devices and surface acoustic waves, which is applied to electrical components, impedance networks, etc., and can solve problems such as independent optimization of filters.

Active Publication Date: 2012-07-11
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the same active layer is used for all components, which does not allow for indepe...

Method used

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  • Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same
  • Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same
  • Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same

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Embodiment Construction

[0074] Generally speaking, if figure 2 As shown, the device of the present invention includes a substrate including piezoelectric material on at least a surface.

[0075] Advantageously, as described below, the substrate may be a piezoelectric material P iézo2 , the piezoelectric material P iézo2 The upper set has a layer comprising a metal M 1 ,, a layer of piezoelectric material P iézo1 and a layer of metal M 2 stack, thereby defining a first region in which a BAW-type bulk acoustic wave filter is fabricated. Advantageously, between the second piezoelectric material and the layer metal M 1 An acoustic decoupling layer is placed in between to decouple the two piezoelectric layers.

[0076] Substrate P iézo2 Also comprising in the second region a metallization assembly M for defining a set of electrodes on the surface of said piezoelectric material 3 , resulting in a surface acoustic wave filter.

[0077]Piezoelectric materials can be of different types: Piezoelectri...

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PUM

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Abstract

The invention relates to an acoustic wave device comprising at least one surface acoustic wave (SAW) filter and one bulk acoustic wave (BAW) filter, characterized in that it includes, on a substrate comprising a second piezoelectric material (Piezo2): a stack of layers comprising at least a first metal layer (M1) and a layer of a first monocrystalline piezoelectric material (Piezo1), wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization (M2) at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization (M3) at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material. The invention also relates to a method for making the device of the invention, advantageously using application steps similar to those used is the Smart Cut TM method or mechanical bonding/thinning steps.

Description

technical field [0001] The field of the invention is that of bandpass filters, and more specifically that of acoustic wave filters. Background technique [0002] The development of radio frequency communication in the past decade or so is reflected in the congestion of authorized frequency bands. In order to exploit the usable frequency band, the system must include band-pass filtering means with narrow transition bands. Only resonator filters in SAW (surface wave) or BAW (bulk wave) technology that exploit the piezoelectric properties of the material enable these specifications to achieve low loss and reduced crowding. Currently, piezoelectric layers for these filters can be fabricated by deposition, which enables the design of bulk acoustic wave filters (BAW filters), or from bulk substrates, which allows the design of surface acoustic wave filters (SAW filters). device). [0003] The specifications required by professionals in telecom equipment are becoming more string...

Claims

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Application Information

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IPC IPC(8): H03H3/02H03H3/08
CPCH03H3/02H03H3/08H03H2003/0071Y10T29/42
Inventor C・德盖L・克拉弗利耶E・德费A・莱因哈特
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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