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Crucible capable of improving utilization rate of silicon ingot and using frequency of seed crystal and preparation method of crucible

A utilization rate and crucible technology is applied in the field of crucibles and their preparation for improving the utilization rate of silicon ingots and the use times of seed crystals, and can solve the problem of long low minority carrier life area of ​​silicon ingots, the influence of repeated use times of seed crystals, and reduced minority carrier life of silicon ingots. and other problems, to achieve the effect of improving the quality and utilization rate of silicon ingots, improving the utilization rate of silicon ingots, and improving the utilization rate of seed crystals.

Active Publication Date: 2012-07-18
JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, the impurities in the seed crystal diffuse into the newly grown crystal through solid-state diffusion, resulting in a decrease in the minority carrier lifetime at the tail of the silicon ingot, and a longer region with a lower minority carrier lifetime.
In addition, this part of the seed crystal is in direct contact with the crucible, which will also lead to an increase in the content of impurities in the seed crystal.
When recycling this part of the seed crystal, impurities in the base of the crucible body and the silicon nitride layer enter the seed crystal through solid-state diffusion, resulti

Method used

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  • Crucible capable of improving utilization rate of silicon ingot and using frequency of seed crystal and preparation method of crucible
  • Crucible capable of improving utilization rate of silicon ingot and using frequency of seed crystal and preparation method of crucible
  • Crucible capable of improving utilization rate of silicon ingot and using frequency of seed crystal and preparation method of crucible

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Embodiment 1

[0027] Such as figure 1 As shown, a crucible 100 for improving the utilization rate of silicon ingots and the number of times of use of seed crystals includes a body 10 , a silicon nitride layer 20 and a high-purity isolation layer 30 . The body 10 includes a base and side walls extending upward from the base, the base and the side walls jointly enclose a storage space, the silicon nitride layer 20 is attached to the body base and side walls facing the storage space, and the isolation layer 30 is attached to the nitride On the silicon layer 20 , facing the base of the main body in the receiving space.

[0028] Take a quartz crucible sprayed with a silicon nitride layer, and set a quartz glass sheet with a thickness of 1mm on the silicon nitride layer at the base of the crucible body as an isolation layer. The quartz purity of the quartz glass sheet is 99.99%. Then lay the seed crystal 40 on the isolation layer, and install the prepared raw material 50 on the seed crystal 40 f...

Embodiment 2

[0031] A crucible for improving the utilization rate of silicon ingots and the number of times of use of seed crystals, the structure is the same as that of the first embodiment, the difference is that the set isolation layer is a silicon nitride film with a thickness of 100nm, and the density of the film is 99.9%. The purity of silicon oxide is 99.99%, and the silicon nitride film is deposited by plasma enhanced chemical vapor deposition (PECVD).

[0032] Wherein, the deposition conditions are as follows: a deposition temperature of 350° C., a process pressure of 2.6 Torr, a gas flow rate of silane of 480 sccm, and a gas flow rate of ammonia gas of 3800 sccm.

Embodiment 3

[0034] A crucible for improving the utilization rate of silicon ingots and the number of times of use of seed crystals, the structure is the same as that of the first embodiment, the difference lies in that the isolation layer is made of quartz glass sheet and silicon nitride film.

[0035] Take a quartz crucible that has been sprayed with a silicon nitride layer, lay a layer of quartz glass sheet with a thickness of 1mm and a purity of 99.90% on the silicon nitride layer at the base of the crucible body, and then use plasma enhanced chemical vapor deposition (PECVD) A layer of silicon nitride film is deposited on the quartz glass sheet, the thickness of the silicon nitride film is 100nm, the density is 99.9%, and the purity of the silicon nitride is 99.99%.

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Abstract

The invention provides a crucible capable of improving the utilization rate of a silicon ingot and the using frequency of a seed crystal, and a preparation method of the crucible. The crucible disclosed by the invention comprises a body, a silicon nitride layer and a high-purity isolation layer, wherein the body comprises a base and a side wall extending upwards from the base, an accommodating space is formed by the base and the side wall, the silicon nitride layer is attached to the base and the side wall of the body, which face towards the accommodating space, and the isolation layer is attached to the silicon nitride layer and faces towards the base of the body in the accommodating space. The crucible disclosed by the invention can prevent impurities in the base of the body of the crucible and the silicon nitride layer from diffusing and entering into the seed crystal, so as to reduce the length of a low minority carrier lifetime region at the tail part of the silicon ingot and improve the utilization rate of the silicon ingot. Simultaneously, as the non-molten seed crystal is not polluted by the impurities, the seed crystal can be utilized repeatedly, and the utilization frequency of the seed crystal can be improved.

Description

technical field [0001] The invention relates to the field of single crystal silicon ingots, in particular to a crucible for improving the utilization rate of silicon ingots and the use times of seed crystals and a preparation method thereof. Background technique [0002] At present, the main method used in the industrialized casting of single crystal silicon ingots is to lay seed crystals on the base of the crucible, and use unmelted single crystal blocks as seed crystals to grow single crystal silicon ingots. [0003] After laying the seed crystal on the base of the crucible, since the purity of the crucible body and the silicon nitride sprayed on the surface of the crucible body is generally 99-99.9%, it contains many impurities. Under high temperature conditions, these impurities enter the seed crystal through solid state diffusion. Accompanying crystal growth, growth proceeds along the direction of the unmelted seed crystal. In this way, the impurities in the seed cryst...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/06
Inventor 胡动力
Owner JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD