Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Exposure device and exposure method

An exposure device and exposure method technology, applied in the field of exposure, can solve problems such as low light transmittance, pattern cannot conform to pattern, and limit the performance of electronic products, so as to achieve the effect of improving performance and reducing pattern line distance

Active Publication Date: 2012-07-18
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Photo-lithography technology (photo-lithography) has been widely used in the manufacturing process of various electronic products. Photo-lithography technology can be used to expose photoresist (PR) to form different patterns (pattern), but when the pattern of photoresist When the line space is small, the light transmittance is small, resulting in part of the photoresist not being exposed and connected together. Therefore, the pattern formed after photolithography cannot conform to the preset pattern, which greatly limits performance of electronic products

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Exposure device and exposure method
  • Exposure device and exposure method
  • Exposure device and exposure method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are for explaining and understanding the present invention, but not for limiting the present invention.

[0025] In the figures, structurally similar units are denoted by the same reference numerals.

[0026] Please refer to figure 1 , which shows a schematic diagram of an exposure apparatus according to a first embodiment of the present invention. The exposure device 100 of this embodiment is used for exposing the photoresist layer 102 on the transparent substrate 101 to pattern the photoresist layer 102 . Wherein, the transparent substrate 101 is, for examp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an exposure device and an exposure method. The exposure method includes that an exposure light source is used for supplying light to a photoresist layer, wherein the light penetrates through a photomask and a light transmitting base board to the photoresist layer; and a baffle-board is used for reflecting the light which penetrates through the photomask and the light transmitting base board back to the photoresist layer. The exposure device and the exposure method can reduce line distances of patterns of the photoresist layer.

Description

【Technical field】 [0001] The invention relates to the field of exposure technology, in particular to an exposure device and an exposure method. 【Background technique】 [0002] Photo-lithography technology (photo-lithography) has been widely used in the manufacturing process of various electronic products. Photo-lithography technology can be used to expose photoresist (PR) to form different patterns (pattern), but when the pattern of photoresist When the line space is small, the light transmittance is small, resulting in part of the photoresist not being exposed and connected together. Therefore, the pattern formed after photolithography cannot conform to the preset pattern, which greatly limits performance of electronic products. [0003] In particular, in many current electronic devices, such as liquid crystal display devices, it is necessary to continuously reduce the pitch of patterns to improve the performance of the electronic devices. [0004] Therefore, it is necess...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/2008G03F7/20
Inventor 施明宏许哲豪薛景峰
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com