Unlock instant, AI-driven research and patent intelligence for your innovation.

Grid capacitance model of high-voltage device

A technology for gate capacitors and high-voltage devices, applied in the field of gate capacitor models, can solve problems such as the lack of an accurate model method of gate field plate overlap capacitance, and achieve the effects of saving circuit design cycles, improving model accuracy, and improving simulation accuracy.

Active Publication Date: 2014-05-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no standard high-voltage device model in the industry, let alone an accurate model method for gate-field-plate overlap capacitance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grid capacitance model of high-voltage device
  • Grid capacitance model of high-voltage device
  • Grid capacitance model of high-voltage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Such as image 3 Shown is the equivalent circuit diagram of the embodiment model of the present invention. The gate capacitance model of the high-voltage device in the embodiment of the present invention includes the gate capacitance in the BSIM model, and the gate capacitance model also includes the gate-source overlap capacitance formed between the gate field plate and the source terminal, or the gate The gate-drain overlap capacitance formed between the field plate and the drain terminal.

[0028] The gate-source overlap capacitance includes overlap capacitance I between the gate field plate and the source active region, and overlap capacitance II between the gate field plate and the source field oxygen region. The first overlap capacitor and the second overlap capacitor are connected in parallel. The calculation formulas of the gate-source overlapping capacitance, the overlapping capacitance 1, and the overlapping capacitance 2 are as follows:

[0029] C gs_over...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a grid capacitance model of a high-voltage device, which comprises a Berkeley short-channel insulated gate field effect transistor model (BSIM) grid capacitor, a grid source overlap capacitor formed between a grid field plate and a source end or a grid drain overlap capacitor formed between the grid field plate and a drain end. On the basis of the existing BSIM grid capacitor, overlap capacitors guided by the grid field plate are added, therefore precision of high-voltage device models and simulation precision of high-voltage integrated circuit are improved, and a design cycle of a circuit is saved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a gate capacitance model of a high-voltage device. Background technique [0002] For high-voltage devices used in high-voltage integrated circuit design, such as high-voltage MOS and high-voltage LDMOS, field plate technology is generally applied to improve the breakdown voltage of the device. The field plate technology is: In a high-voltage device, the gate not only covers the channel region, but also extends outside the channel region, and the outside of the channel region includes the source active region or the source field oxygen region on the source side , or the drain active region or the drain field oxygen region on the drain side, and the gate covering the source active region or the source field oxygen region, or the drain active region or the drain field oxygen region is grid field plate. According to the different actual conditions of va...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 武洁
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP