Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube

A semiconductor tube and measurement method technology, applied in the direction of single semiconductor device testing, material thermal development, etc., can solve problems such as multi-time, high cost, and complicated operation methods, and achieve the effect of simple operation, low cost, and wide application range
CN102608511BActive Publication Date: 2014-12-10SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SOUTHEAST UNIV
Publication Date
2014-12-10

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Abstract

The invention discloses a method for measuring the junction temperature and thermal resistance of a metal-oxide semiconductor tube. The method comprises the following steps of: placing an insulating substrate with a device to be measured into a temperature control box, and adjusting the temperature control box to 25 DEGC; applying a DC (direct current) voltage to the drain end and source end of the device to be measured, and applying a grid DC working voltage to the grid; measuring the current at the drain and source ends of the device to be measured when the voltage on the grid is a DC working voltage; removing the DC working voltage on the grid; applying a square-wave pulse voltage to the grid; gradually increasing the temperature in the temperature control box, wherein the maximum temperature does not exceed the junction temperature of the measured device; continuously measuring the leakage current at the drain and source ends of the device to be measured; and when the measured leakage current at the drain and source ends of the device to be measured is equal to the current at the drain and source ends of the device to be measured, calculating the thermal resistance of the device to be measured by taking the temperature in the temperature control box as an equivalent junction temperature.
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Description

technical field

[0001] The technology belongs to the technical field of semiconductor device measurement in microelectronic technology, and in particular relates to a method for measuring junction temperature and thermal resistance of a metal oxide semiconductor tube. Background technique

[0002] After the chip manufacturing of large-scale integrated circuits is completed, except for the case of secondary integration using thick film process or thin film process, packaging is required in most cases. The packaging of large-scale integrated circuits is also called the post-process. The function of packaging is to provide electrical connection and mechanical load for the chip, making it easy to operate and use, providing a standardized installation structure and size for users of large-scale integrated circuits, and preventing the chip from being subjected to external forces, scratches, water vapor or other Corrosion of harmful gases, sometimes multiple chips can be packaged ...

Claims

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