Method for removing amorphous carbon films for cyclically utilizing silicon chips
A technology of amorphous carbon and silicon wafers, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of silicon wafer 11 with multiple ions, damage, and low recycling rate of silicon wafers, achieving small ion damage, The effect of improving the recycling rate
Active Publication Date: 2012-07-25
SHANGHAI HUALI MICROELECTRONICS CORP
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[0003] figure 1 It is a schematic diagram of the process structure of conventional removal of amorphous carbon in the background technology of the present invention, figure 2 It is a schematic diagram of the process flow for routine removal of amorphous carbon in the background technology of the present invention; as Figure 1-2 As shown, in the reaction chamber 13, the ashing process usually uses O 2 Generate in situ plasma O in the reaction chamber + , while the active O + React with amorphous carbon to generate volatile gases such as CO, CO 2 etc., thereby removing the amorphous carbon layer 12 on the surface of the silicon wafer 11, and then using a wet process to remove the residual polymer and the oxide generated in the ashing process; using the above process, more ions will be generated on the silicon wafer 11 Damage (damage), resulting in lower recycling rate of silicon wafers
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[0022] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
[0023] image 3 It is a structural schematic diagram of using a remote system to generate plasma for ashing process in the method for removing amorphous carbon film and recycling silicon wafer in the present invention; Figure 5 It is a schematic process flow diagram of the method for removing amorphous carbon film and recycling silicon wafers in the present invention.
[0024] Such as image 3 with 5 As shown, first, a silicon wafer 21 covered with an amorphous carbon layer (Amorphous Carbon) 22 is placed in a reaction chamber 23, and a remote system 24 is used to generate plasma for the silicon wafer 21 for a time of 0-600s. ashing process, i.e. active O + React with amorphous carbon to generate volatile gases such as CO, CO 2 etc., so as to remove the amorphous carbon layer 22 on the surface of the silicon wafer 21, and then use a wet proc...
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The invention relates to the field of semiconductor manufacture, in particular to a method for removing amorphous carbon films for cyclically utilizing silicon chips. The invention provides the method for removing the amorphous carbon films for cyclically utilizing the silicon chips, the ashing process is carried out through producing plasmas by adopting a remote system or producing active O<+> by an ozone generator, the same amorphous carbon removal efficiency can be reached, and in addition, the damage to ions on the surfaces of the silicon chips is little, so the cyclic utilization rate of the silicon chips is improved.
Description
technical field [0001] The invention relates to the manufacturing field of semiconductor integrated circuits, in particular to a method for removing an amorphous carbon film and recycling a silicon wafer. Background technique [0002] At present, regarding the process of removing the amorphous carbon (amorphous carbon) film layer, the common practice in the industry is to use the same process conditions as the photoresist removal process, that is, the ashing process, and then use the wet method to remove the surface polymer (polymer) and the front surface. oxide layer produced by the process. [0003] figure 1 It is a schematic diagram of the process structure of conventional removal of amorphous carbon in the background technology of the present invention, figure 2 It is a schematic diagram of the process flow for routine removal of amorphous carbon in the background technology of the present invention; as Figure 1-2 As shown, in the reaction chamber 13, the ashing pro...
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Inventor 郑春生
Owner SHANGHAI HUALI MICROELECTRONICS CORP