A method for removing amorphous carbon film and recycling silicon wafer

Abstract

The invention relates to the field of semiconductor manufacture, in particular to a method for removing amorphous carbon films for cyclically utilizing silicon chips. The invention provides the method for removing the amorphous carbon films for cyclically utilizing the silicon chips, the ashing process is carried out through producing plasmas by adopting a remote system or producing active O<+> by an ozone generator, the same amorphous carbon removal efficiency can be reached, and in addition, the damage to ions on the surfaces of the silicon chips is little, so the cyclic utilization rate of the silicon chips is improved.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor integrated circuits, in particular to a method for removing an amorphous carbon film and recycling a silicon chip. Background technique [0002] At present, regarding the process of removing the amorphous carbon (amorphous carbon) film layer, the common practice in the industry is to use the same process conditions as the photoresist removal process, that is, the ashing process, and then use the wet method to remove the surface polymer (polymer) and the front surface. oxide layer produced by the process. [0003] figure 1 It is a schematic diagram of the process structure of conventional removal of amorphous carbon in the background technology of the present invention, figure 2 It is a schematic diagram of the process flow for routine removal of amorphous carbon in the background technology of the present invention; as Figure 1-2 As shown, in the reaction chamber 13, the ashing proc...

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Problems solved by technology

[0003] figure 1 It is a schematic diagram of the process structure of conventional removal of amorphous carbon in the background technology of the present invention, figure 2 It is a schematic diagram of the process flow for routine removal of amorphous carbon in the background technology of the present invention; as Figure 1-2 As shown, in the reaction chamber 13, the ashing process usually uses O 2 Generate in situ plasma O in the reaction chamber + , while the active O + React with amorphous carbon to generate volatile gases such as CO, CO 2 etc., thereby removing the amorphous carbon layer 12 on the surface of the silicon wafer 11, and then using a wet process to remove the residual polymer and the oxide generated in the ashing process; using the above process, more ions will be generated on the silicon wafer 11 Damage (damage), resulting in lower recycling rate of silicon wafers

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