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Electroluminescent device based on CdZnO thin film and preparation method of electroluminescent device
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A technology of electroluminescent devices and thin films, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of long preparation period, high equipment requirements, and large turn-on voltage, and achieve short preparation period, low equipment requirements, and open The effect of low voltage
Inactive Publication Date: 2014-12-17
ZHEJIANG UNIV
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Problems solved by technology
However, the above devices all have problems such as complex structure, high turn-on voltage, high requirements on equipment, and long preparation cycle.
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Embodiment 1
[0043] 1) Clean P-type , with a resistivity of 0.01 ohm cm and a size of 15×15mm 2 , a silicon wafer with a thickness of 675 μm.
[0044] 2) Deposit MgO thin film on Si substrate by radio frequency sputtering, substrate temperature is 300°C, sputtering power is 100W, Ar, O 2 The flow rates were 30:15, the air pressure was 3 Pa, the sputtering time was 1 hour, and the film thickness was about 60 nm; heat treatment was performed at 500° C. in air for 1 hour.
[0045] 3) Deposit CdZnO thin film on Si substrate by radio frequency sputtering, the target material is CdZnO ceramic target with Cd doping content 20atom%, substrate temperature is 600°C, sputtering power is 100W, Ar, O 2 The flow rate is 30:15, the air pressure is 3.5Pa, the sputtering time is 1 hour, and the film thickness is about 120nm; after deposition, it is subjected to RTP heat treatment at 800°C under Ar atmosphere, and the treatment time is 1 minute.
[0046] 4) Sputter a semi-transparent Au electrode with a t...
Embodiment 2
[0050] 1) Clean P-type , with a resistivity of 0.01 ohm cm and a size of 15×15mm 2 , a silicon wafer with a thickness of 675 μm.
[0051] 2) Deposit MgO thin film on Si substrate by radio frequency sputtering, substrate temperature is 300°C, sputtering power is 100W, Ar, O 2 The flow rates were 30:15, the air pressure was 3 Pa, the sputtering time was 1 hour, and the film thickness was about 60 nm; heat treatment was performed at 500° C. in air for 1 hour.
[0052] 3) Deposit CdZnO thin film on Si substrate by radio frequency sputtering, the target material is CdZnO ceramic target with Cd doping content 20atom%, substrate temperature is 600°C, sputtering power is 100W, Ar, O 2 The flow rate is 30:15, the air pressure is 3.5Pa, the sputtering time is 1 hour, and the film thickness is about 120nm; after deposition, it is subjected to RTP heat treatment at 900°C under Ar atmosphere, and the treatment time is 1 minute.
[0053] 4) Sputter a semi-transparent Au electrode with a t...
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Abstract
The invention discloses an electroluminescent device based on a CdZnO thin film and a preparation method of the electroluminescent device. The electroluminescent device comprises a P-type silicon substrate, wherein an insulating layer, a light-emitting layer and an electrode layer are deposited on the front of the P-type silicon substrate from the bottom up; ohm contact electrodes are deposited on the back of the P-type silicon substrate; and the light-emitting layer is the CdZnO thin film. According to the invention, a P-type silicon wafer is used as the substrate, the CdZnO thin film is used as the main light-emitting material, the P-type silicon wafer and the CdZnO thin film are combined with the insulating layer, the electrode layer, etc. for the preparation of the electroluminescent device with a CdZnO / insulating layer / p+-Si structure through proper process. The method disclosed by the invention is simple in process, short in preparation period, low in requirement on equipment, compatible with the process of the existing mature silicon devices. The electroluminescent device prepared by the method has simple structure, is low in start voltage, can realize electroluminescence in a visible region at a certain forward bias, and is high in the light-emitting efficiency.
Description
technical field [0001] The invention relates to an electroluminescent device, in particular to an electroluminescent device based on a CdZnO thin film and a preparation method. Background technique [0002] Due to the development of optoelectronic technology and the demand for short-wavelength optoelectronic devices in the ultraviolet and visible regions, ZnO materials have received more and more attention. ZnO is a wide band gap direct band gap semiconductor with a band gap of 3.36eV at room temperature and an exciton binding energy of 60meV, so it is not easily excited by heat at room temperature and has the necessary conditions to emit short-wavelength light at room temperature. Recent studies have shown that ZnO has high-field electroluminescent properties due to its suitable band gap, abundant intrinsic defects and easy doping of ions, and its material sources are abundant, low in price, low in preparation temperature, and chemically stable. Good performance, good co...
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