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Thin film structure capable of improving laser thermal etching graphics resolution and preparation method of thin film structure

A technology of laser thermal etching and graphic resolution, which is applied in the direction of photosensitive materials, vacuum evaporation plating, coating, etc. for optomechanical equipment, and can solve the problem of limited resolution improvement, limitation, manufacturing cost and technology of lithography system Increased difficulty and other issues to achieve the effect of improving resolution and reducing heat spread

Inactive Publication Date: 2012-08-15
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, with the shortening of the laser wavelength and the increase of the numerical aperture, the improvement of the resolution is very limited, and the manufacturing cost and technical difficulty of the matching lithography system also increase accordingly, which limits its practical application.

Method used

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  • Thin film structure capable of improving laser thermal etching graphics resolution and preparation method of thin film structure
  • Thin film structure capable of improving laser thermal etching graphics resolution and preparation method of thin film structure
  • Thin film structure capable of improving laser thermal etching graphics resolution and preparation method of thin film structure

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preparation example Construction

[0018] The preparation method of the film structure for improving the resolution of the laser thermal etching pattern comprises the following steps:

[0019] ① The glass substrate 3 was soaked in deionized water and ultrasonically cleaned and then ultrasonically cleaned with absolute ethanol twice, each time for 10 minutes, and dried with high-pressure nitrogen with a purity of 99.9%, and placed in a desiccator for standby;

[0020] ② Fix the glass substrate on the substrate holder of the magnetron sputtering apparatus, then clamp the substrate holder on the substrate seat in the vacuum chamber of the magnetron sputtering apparatus, then close the vacuum chamber cover and start pumping Vacuum, when the background vacuum in the sputtering chamber is better than 3×10 -4 At Pa, pass argon, and control the argon flow rate to 80 sccm through the gas flow meter, and at the same time adjust the gate valve of the magnetron sputtering instrument to maintain the working pressure at 0.75...

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Abstract

The invention provides a thin film structure capable of improving laser thermal etching graphics resolution and a preparation method of the thin film structure. The thin film structure comprises a heat conduction thin film layer and a laser thermal etching thin film layer which are deposited on a glass substrate. The thin film structure is prepared by using a magnetron sputtering method. The thin film structure provided by the invention has the advantages of simple film structure, good controllability on parameters in the preparation process, high repeatability, low requirement on the substrate and the like, and can effectively improve the resolution of laser thermal etching graphics.

Description

technical field [0001] The invention relates to laser thermal etching, in particular to a film structure for improving the resolution of laser thermal etching patterns and a preparation method thereof. Background technique [0002] Laser thermal etching technology was proposed by M. Kuwahara et al. in Japan in 2002 (references: [1] M. Kuwahara, J. M. Li, C. Mihalcea, N. Atoda, J. Tominaga, L. P. Shi, Jpn. J. Appl. Phys. 2002; 41, L1022-L1024.), this technology mainly uses the thermal change threshold effect of laser thermal etching materials to prepare high-resolution micro-nano lithography patterns. First, the Gaussian laser beam is used to directly irradiate the laser thermally etched film. After the thermally etched film absorbs photons, the thermal effect causes the physical or chemical properties of the thermally etched film to change, and finally achieves selective development in the developer. The technology has the advantages of low cost of lithography equipment, ea...

Claims

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Application Information

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IPC IPC(8): G03F7/09C23C14/35
Inventor 李豪耿永友吴谊群魏劲松王阳
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI