Method and apparatus for surface treatment using a mixture of acid and oxidizing gas

An oxidative, fluid treatment technology, applied to the surface of objects, can solve the problem of reducing the reaction performance

Inactive Publication Date: 2012-08-15
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During processing, SPM processing needs to add H 2 o 2 , to replenish the depleted oxidant, which adds water, diluting the acid / hydrogen peroxide mixture and reducing the reaction performance

Method used

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  • Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
  • Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
  • Method and apparatus for surface treatment using a mixture of acid and oxidizing gas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The temperature of the gas / liquid mixture is 150℃

[0046] The temperature of the liquid (sulfuric acid) before being introduced into the mixing joint is 150°C

[0047] The cross-sectional area of ​​the orifice of the dispensing nozzle is 72mm 2 (For 3 / 8" hole)

[0048] The rotation speed of the wafer 150rpm

[0049] Liquid volume flow rate 1.6l / min

[0050] Volumetric flow rate of gas 0.6l / min

[0051] The volumetric flow rate of the mixture is 2.2l / min

[0052] Distribution speed of orifice 1m / s

[0053] The ratio of gas to liquid in the gas / liquid mixture is 27vol.%

[0054] The mass percentage concentration of sulfuric acid 97-80% (mass percentage)

[0055] Ozone in the gas (10% by mass), the rest is oxygen and unintentional impurities

Embodiment 2

[0057] The temperature of the gas / liquid mixture is 153℃

[0058] The temperature of the liquid (sulfuric acid) before being introduced into the mixing joint is 140°C

[0059] The cross-sectional area of ​​the orifice of the dispensing nozzle is 30mm 2 (For 1 / 4" hole)

[0060] The rotation speed of the wafer 100rpm

[0061] Liquid volume flow rate 0.6l / min

[0062] The volumetric flow rate of gas 1.6l / min

[0063] The volumetric flow rate of the mixture is 2.2l / min

[0064] Distribution speed of orifice 1m / s

[0065] The ratio of gas to liquid in the gas / liquid mixture is 70vol.%

[0066] The mass percentage concentration of sulfuric acid 96-88% (mass percentage)

[0067] Ozone in the gas (12% by mass), the rest is oxygen and unknown impurities

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Abstract

Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by combining gaseous ozone and heated sulfuric acid such that a gas / liquid dispersion or foam of ozone in sulfuric acid is applied in a layer to the wafer surface to be treated.

Description

Technical field [0001] The present invention relates to a method and apparatus for treating the surface of an object such as a semiconductor wafer with a mixture of inorganic acid and oxidizing gas. Background technique [0002] Semiconductor wafers go through various wet processing stages in the integrated circuit manufacturing process, one of which is the removal of photoresist from the wafer. When the photoresist is stripped by wet processing, the chemical composition used for stripping contains a solution of sulfuric acid and hydrogen peroxide (SPM). During processing, SPM processing needs to add H 2 O 2 , To replenish the exhausted oxidant, which will increase water and dilute the acid / hydrogen peroxide mixture, thereby reducing the reaction performance. [0003] SOM (sulfuric acid ozone mixture) treatment is also recommended. These treatments include decomposing ozone in sulfuric acid and reacting ozone with sulfuric acid to produce dipersulfuric acid or peroxodisulfuric ac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/302
CPCG03F7/423H01L21/31133H01L21/6708H01L21/0273H01L21/302
Inventor 罗伯特·库姆宁赖因哈德·泽尔墨
Owner LAM RES CORP
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