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Plasma laser capable of overcoming diffraction limit in two dimensions

A plasma and diffraction-limited technology, applied in the structure of optical resonant cavity, optical waveguide semiconductor structure, etc., can solve the problems of ohmic thermal resistance loss, laser device implementation obstacles, etc., to improve the loss situation, realize high integration, Achieve the effect of miniaturization

Inactive Publication Date: 2012-08-22
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

At the same time, the problem of ohmic thermal resistance loss in the optical band caused by metals also occurs, which hinders the realization of nanoscale laser devices based on surface plasmon modes. Researchers often compensate for this type of loss by introducing high-gain dielectric materials. , to improve the performance of laser devices

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  • Plasma laser capable of overcoming diffraction limit in two dimensions
  • Plasma laser capable of overcoming diffraction limit in two dimensions
  • Plasma laser capable of overcoming diffraction limit in two dimensions

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] The invention provides a plasma laser that overcomes the diffraction limit in two dimensions. The structure of the plasma laser grows a metal layer on a dielectric material whose two-dimensional scale is lower than the diffraction limit of the lasing wavelength to realize plasma mode oscillation. In another dimension, the FP cavity oscillation feedback mechanism is introduced to realize the enhancement of the mode quality factor and the lasing of the mode. The laser can effectively improve the quality factor of the plasma mode, improve the loss of the plasma mode, and realize the miniaturization of the laser device.

[0032] like figure 1 as shown, figure 1 A schematic diagram of the structure of a plasma laser i...

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Abstract

The invention discloses a plasma laser capable of overcoming diffraction limit in two dimensions, which comprises a dielectric material strip and a metal layer, wherein the dielectric material strip is covered by the metal layer. According to the plasma laser, the metal layer grows on a dielectric material, so that plasma mode oscillation is achieved, the two-dimension scale of the dielectric material is lower than the diffraction limit of lasing wavelengths, a Fabry-Perot (FP) cavity oscillation feedback mechanism is introduced in another dimension, and reinforcement of mode quality factors and mode lasing are achieved. The plasma laser capable of overcoming the diffraction limit in two dimensions can improve plasma mode quality factors and the loss condition of the plasma mode effectively and achieves miniaturization of laser devices and high integration of optoelectronic devices.

Description

technical field [0001] The invention relates to the technical field of micro-nano structure research and plasma optoelectronic devices, in particular to a type of plasma laser that overcomes the diffraction limit in two dimensions. Background technique [0002] In the field of laser science, people have successfully designed and manufactured increasingly high-power, faster, and smaller monochromatic light sources with good coherence. For example, recent studies have reported accessible diffraction based on micro-nano structures such as photonic crystals and nanowires. Various laser devices of extreme scale. However, this type of laser has obvious limitations in the optical mode volume and the physical size of the device, and its scale is much larger than the half-wave length of the optical field in the structure. Therefore, it is still a basic and critical challenge to design and manufacture nanoscale light sources and lasers that can generate lasing phenomena and achieve h...

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Application Information

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IPC IPC(8): H01S5/20H01S5/10
Inventor 郑婉华付非亚王宇飞晏新宇周文君陈微
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI