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TFT (thin film transistor), array base plate, display device and mask plate for preparing TFT

A mask and thin film transistor technology, applied in the fields of TFT, array substrates and display devices, can solve problems such as low yield rate, and achieve the effect of eliminating low transmittance and eliminating short channel effect.

Active Publication Date: 2014-07-02
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is how to eliminate the problem of low yield due to channel short circuit in the current SSM mode

Method used

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  • TFT (thin film transistor), array base plate, display device and mask plate for preparing TFT
  • TFT (thin film transistor), array base plate, display device and mask plate for preparing TFT
  • TFT (thin film transistor), array base plate, display device and mask plate for preparing TFT

Examples

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Effect test

Embodiment 1

[0024] In order to eliminate the problems of low yield and insufficient yield in the current SSM method due to the short channel effect, this embodiment provides a mask for preparing a thin film transistor, such as figure 2 As shown, the width of the single slit corresponding to the TFT channel structure of the mask plate is larger than the slit width of the extension portion A on both sides of the bent portion in the area of ​​the inner bending portion B.

[0025] Wherein, the slit width of the mask plate corresponding to the channel part structure of the thin film transistor is formed between 1 μm and 5 μm

[0026] Wherein, the slit width of the bending part B area inside the corresponding thin film transistor channel structure of the mask plate is larger than the slit width of the extension part A area on both sides of the bending part. Wherein, in the region of the bending part B of the mask plate, the source part is formed to be recessed along the direction opposite to t...

Embodiment 2

[0031] In order to eliminate the problems of low yield and insufficient yield in the current SSM method due to the short channel effect, this embodiment provides a mask for preparing a thin film transistor, such as Figure 4 As shown, the width of the single slit corresponding to the TFT channel structure of the mask plate is larger than the slit width of the extension portion A on both sides of the bent portion in the area of ​​the inner bending portion B.

[0032] Wherein, the slit width of the mask plate corresponding to the channel part structure of the thin film transistor is formed between 1 μm and 5 μm

[0033] Wherein, the slit width of the bending part B area inside the corresponding thin film transistor channel structure of the mask plate is larger than the slit width of the extension part A area on both sides of the bending part. Wherein, in the region of the bent part B of the mask plate, the drain part is formed to be recessed along the direction opposite to the s...

Embodiment 3

[0038] In order to eliminate the problems of low yield and insufficient yield in the current SSM method due to the short channel effect, this embodiment provides a thin film transistor, the channel portion of the thin film transistor has a gray tone mask The process is manufactured in a single-slit manner, and the width of the channel part structure of the thin film transistor is between 2 μm and 6 μm.

[0039]Wherein, in the thin film transistor, the channel structure is at the inner bending portion B, and its channel width L2 is larger than the channel width L1 at the extension portion A on both sides of the bending portion. Wherein, at the bending portion B, the source part is formed to be recessed along the direction opposite to the drain, and the shape of the recessed part can be formed as a rectangle, a semicircle, a semiellipse, etc., but is not limited thereto. Thus, the channel width at the bent portion B becomes larger. Among them, the case where the depressed porti...

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Abstract

The invention relates to a TFT, a mask plate for preparing the TFT and a display device including the TFT, and belongs to the field of display technology. In order to eliminate the problems of low yield and insufficient yield rate due to the short channel effect in the current SSM method, the channel part structure of the thin film transistor provided by the present invention is realized in a single-slit manner through a gray tone mask process. The width of the channel portion structure is between 2 μm and 6 μm. By forming the channel width at the U-shaped bending part inside the channel part of the thin film transistor to be larger than the channel width of the extension part on both sides of the bending part, it is possible to eliminate the problem in the prior art due to the small channel width in this region. The resulting short channel effect can eliminate the problems of low pass rate, insufficient yield and low yield in the prior art.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT, an array substrate and a display device thereof, including a mask plate for preparing the TFT. Background technique [0002] In the field of flat panel display, thin film transistors are key devices for making display devices. At present, the response speed and display quality of display devices on the market have better requirements. In order to achieve better display quality, it is necessary to continuously improve the characteristics of thin-film transistors (Thin-Film Transistor, referred to as TFT). And the method of semiconductor materials, but its production cost is relatively high. In order to have better device characteristics, reducing the channel width has become one of the research trends. At present, in order to form a more precise channel size, SSM (Single Slit Mask, single slit mask) is often used to achieve mass production of TFT channel parts with channe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/10G03F1/32
CPCH01L29/78696G03F1/00H01L29/41733H01L27/1288G03F1/22H01L27/1214H01L27/1222H01L29/78618
Inventor 崔承镇刘圣烈宋泳锡
Owner BOE TECH GRP CO LTD