A kind of preparation method of semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device preparation, can solve the problems of accelerating short channel effect, device performance degradation, boron diffusion, etc., and achieve the effect of eliminating short channel effect, good performance and reducing junction leakage
CN103779216BActive Publication Date: 2016-09-21SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2016-09-21

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Abstract

The invention relates to a semiconductor device preparing method. The method comprises the following steps: a semiconductor substrate is provided, wherein the semiconductor substrate at least includes a gate structure; and grooves are formed in two sides of the gate and a SiGeB layer is grown in the grooves through epitaxial growth. The method is characterized in that B is doped in an in-situ manner while performing the epitaxial growth of the SiGe layer, and the epitaxial growth comprises two stages: the first stage is to increase the concentration of B in the SiGe layer to make the concentration of B in the SiGe layer reaches the peak concentration; and the second stage is to reduce the concentration of B in the SiGe layer so as to eliminate the short-channel effect. Through the method of the invention, not only a more flat doping tail contour can be acquired after the B doping process is performed so as to reduce the junction leakage phenomenon, and the method can skip the separate ion implantation process so as to make the stress in the channel region maintained; and but also the method can be used to make the doping concentration of B at channels is low so as to eliminate the short-channel effect to make prepared devices have good performances.
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Description

Technical field

[0001] The present invention relates to the field of semiconductors. Specifically, the present invention relates to a method for manufacturing a semiconductor device. Background technique

[0002] With the continuous development of semiconductor technology, the preparation of semiconductor devices tends to be miniaturized, and has now developed to the nanometer level, while the preparation process of conventional devices has gradually matured. The current method of preparing PMOS often includes the following conventional steps: first, a semiconductor substrate is provided, and then a double well, shallow trench isolation, and polysilicon gate structure are formed on the semiconductor substrate. As the width of the gate continues to decrease, the gate The channel length under the structure is also continuously reduced. In order to effectively prevent the short channel effect, a lightly doped drain process (LDD) is introduced in the integrated circuit manufacturing ...

Claims

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