167results about How to "Guaranteed stress" patented technology

The invention belongs to the field of sheet metal and welding processing, and relates to an integral forming method for a thin-walled titanium alloy part with an irregularly-shaped curved surface. The integral forming method aims at overcoming the defects that the shape of parts processed through the prior art is limited or the procedure and the cost are higher, and effectively ensuring the precision forming of a thin-walled component with an irregular shape. The integral forming method comprises the steps as follows: a parting surface is determined; blanking is carried out; in the preforming step, a plate is bent from a flat into a circular arc through a bending die or a bending machine; welding is carried out; in the hot shaping step, a hot shaping die is put in the inner part of a part that is processed through the assembly welding under the ordinary temperature, and the part is supported tightly due to the dead weight of the die and is heated in a hot shaping machine; and in addition, a pressing machine applies pressure to the hot shaping die when the part is heated until material is softened, so as to enable the part to reach the needed size. The integral forming method comprehensively utilizes the advantages of various processes, can obtain the large-sized thin-walled titanium alloy part with the irregularly-shaped curved surface through only two weld joints, and achieves higher surface quality of the part.

The invention relates to a construction detection used in the hanger rod exchange of middle and lower arc bridges. The invention comprises that building arc bridge spatial reference limit model, analyzing the force state of bridge, simulating the whole construction, the construction uses arc bridge three-dimension position detection, bridge sink detection, displacement detection between arc rib and beam, hanger rod force detection, structural stress detection and long-time detection, then comparing the data of detection with the reference limit model, to correct the model, to be used in next reference limit model. The invention can confirm the flexibility less than theory value and confirm the hang force in design range, to improve safety or the like.

A device and method for compensating or unloading the prestressed load of an anchor cable. For an anchoring project in which the length of the steel strand at the exposed section of the anchor cable meets the tension length, the device includes: a limiting plate, a small jack and a support tube. For the anchor cable For the anchoring project where the length of the steel strand at the exposed section does not meet the tension length, the anchor cable prestress load compensation or unloading device also includes an anchor cable extension device. Anchor cable prestress load compensation or unloading methods include: install anchor cable prestress load compensation or unloading device, install tension jack and tool anchor, insert tension tool anchor clip to tighten external steel strand; start tension The jack oil pump applies the load until the working anchor is pulled and the clip of the working anchor is loosened, continue to apply the load or unload to the specified load value, and then start the small jack to load and push back to the limit plate, the clip re-cables the steel strand, and then Unloading, to complete the anchor cable stress compensation or load reduction, so as to reliably ensure the load compensation or unloading effect of the anchor cable prestress.

The invention discloses a high-strength strip steel straightening, flattening and straightening process. The high-strength strip steel straightening, flattening and straightening process is characterized in that a hot rolling high-strength steel plate or strip steel sequentially passes through an inlet straightening machine, a temper mill and an outlet straightening machine, and by means of the combined working procedures of straightening, flattening and straightening, the adjustment of the plate shape, the surface quality, the mechanical performance and the residual stress of the strip steelis completed; the inlet straightening machine is used for conducting rough straightening on the strip steel, on the one hand, the plate shape of the supplied material is improved, and on the other hand, the scale on the surface of the strip steel is reduced; the temper mill is used for conducting flattening on the strip steel, the plate shape of the strip steel is improved, the mechanical performance of the strip steel is adjusted, and the surface quality of the strip steel is improved; and the outlet straightening machine is used for conducting precise straightening on the strip steel, the unquenched plate shape problems and newly-generated plate shape problems in the flattening process are solved, and the unquenched residual stress and newly-generated residual stress in the flattening process are eliminated.

The invention relates to the technical field of hydrogen storage equipment, and particularly discloses a solid-state hydrogen storage device with high heat exchange characteristics. The solid-state hydrogen storage device comprises an outer tank, wherein an air inlet and outlet valve is arranged at the top of the outer tank, a plurality of hydrogen storage cylinders are fixed in the outer tank insequence, a gap of 0.5mm-3mm is formed between every two adjacent hydrogen storage cylinders, filter sheets are fixed at two ends of the hydrogen storage cylinders correspondingly, a plurality of heat-conducting partition plates are arranged in the hydrogen storage cylinders along the axial direction of the hydrogen storage cylinders, the plurality of heat-conducting partition plates divide the hydrogen storage cylinders into a plurality of hydrogen storage spaces, and the hydrogen storage spaces are filled with hydrogen storage materials. According to the solid-state hydrogen storage device,the multi-layer storage spaces are adopted, so that more rapid hydrogen absorption can be realized, and the problem of structural damage caused by uneven distribution of the hydrogen storage materialsin a hydrogen storage tank and stress concentration in the prior art is effectively solved; and in addition, the uniform distribution of the hydrogen storage materials enables the distribution of heat generated in a hydrogen absorption process to be more uniform, and the heat can be more rapidly conducted out of the hydrogen storage device.

The invention discloses a preparation method of a SiC particle reinforced Cu-based gradient composite material, which comprises the following steps: weighing powder mixing → ball mill mixing powder for 4 hours → 400MPa billet making → vacuum degree of 10-2Pa, sintering temperature of 950°C, heating rate 10°C/min, holding time 2.5 hours for one sintering → cooling in the furnace after completion → secondary pressing at a pressure of 400MPa → vacuum degree of 10-2Pa, sintering temperature of 950°C, heating rate of 10°C/min, heat preservation The time is 2.5 hours for secondary sintering → cooling with furnace after completion → sample. It makes up for the shortcomings of uniform performance of traditional homogeneous composite materials with a certain content of reinforcing particles, thereby improving the service life of gradient composite material parts.

A method for designing a crack propagation characteristic simulator of a central hole of a centrifugal impeller include such steps as obtaining a geometric model of that centrifugal impeller, measurea diameter and a thickness of the central hole structure, measuring the diameter and the thickness of the centrifugal impeller, measuring the diameter and the thickness of the centrifugal impeller, measuring the diameter and the thickness of the centrifugal impeller, measuring the diameter and the thickness of the centrifugal impeller, (2) obtaining the working conditions of the centrifugal impeller and the material performance parameters under the working conditions, including load, temperature, elastic modulus, yield strength and so on; (3) Establishing the finite element static analysis model of centrifugal impeller, calculating and obtaining the maximum circumferential stress point at the center hole of centrifugal impeller, and obtaining the circumferential stress value and the circumferential stress gradient of the point; (4) Based on the basic shape of the plate simulator with symmetrical circular notch, the central hole structure simulator is designed, so that the maximum stress along the direction of tensile loading on the stress concentration point of the simulator is equal to the maximum circumferential stress in the actual central hole structure, and the stress gradientis ensured to be the same; (5) Calculate the stress intensity factor of the simulator and determine the thickness of the simulator.

The invention discloses a same-direction conversion device and an ocean power generation system adopting the same-direction conversion device. The same-direction conversion device comprises a first energy conversion wheel, two unidirectional driving gears capable of achieving reverse drive, and a power wheel, wherein due to the association function in which the first unidirectional driving gear and the second unidirectional driving gear of which the driving direction is opposite to that of the first unidirectional driving gear cooperate with rotating wheels at the same time, the power wheel rotates in one direction no matter whether the first energy conversion wheel rotates anticlockwise or clockwise, and mechanical motion in different directions is converted into mechanical motion in onedirection. The same-direction conversion device is applied to the ocean power generation system, the system is equipped with energy transfer devices, main brackets and a power generation device, the energy transfer devices can convert wave energy into mechanical energy and drive the same-direction conversion device to operate, and the power wheel of the same-direction conversion device is connected with the power generation device and drives a generator to operate. According to the ocean power generation system, continuous power supply of the generator can be achieved, and power generation efficiency is improved.

The invention provides a preparation method of a titanium alloy seamless pipe. The preparation method comprises the following steps: step 1, smelting titanium sponge and intermediate alloy for multiple times to obtain a titanium alloy cast ingot; step 2, heating the titanium alloy cast ingot obtained by smelting, carrying out drawing forging, and carrying out multi-heating-number upsetting and drawing above the transformation temperature of the titanium alloy and below the transformation temperature of the titanium alloy in a staggered manner to obtain a titanium alloy bar blank; step 3, punching a through hole in a titanium alloy bar, and performing boring to obtain a titanium alloy hollow bar blank; step 4, coating the inner surface and the outer surface of the heated titanium alloy hollow rod blank with lubricating agent, and then extruding the titanium alloy hollow rod blank to obtain a titanium alloy extruded pipe blank; step 5, performing one-time forming precision forging on thetitanium alloy extruded pipe blank to obtain a precision forging finished pipe blank; and step 6, conducting straightening and machining after overall heat treatment to obtain the titanium alloy seamless pipe. The titanium alloy seamless pipe manufactured by the preparation method has the advantages of being adjustable in pipe outer diameter and shape, high in size precision, high in structural uniformity and the like.

The invention discloses a semiconductor device and a manufacturing method thereof. According to the invention, after source/drain regions or lifting regions are formed, a contact plug structure containing nano-scale catalytic metal particles and carbon nanotubes on the nano-scale catalytic metal particles is formed. The nano-scale catalytic metal particles not only has an effect of inducting growth of the carbon nanotubes but also is capable of reducing contact resistances between contact plug and the source/drain regions in contact holes, so that contact resistances of the device can be reduced; moreover, the carbon nanotubes itself has high conductivity, thereby substantially reducing body resistance for contact; and thus, a parasitic resistance of the device is reduced.

The invention relates to a semiconductor device preparing method. The method comprises the following steps: a semiconductor substrate is provided, wherein the semiconductor substrate at least includes a gate structure; and grooves are formed in two sides of the gate and a SiGeB layer is grown in the grooves through epitaxial growth. The method is characterized in that B is doped in an in-situ manner while performing the epitaxial growth of the SiGe layer, and the epitaxial growth comprises two stages: the first stage is to increase the concentration of B in the SiGe layer to make the concentration of B in the SiGe layer reaches the peak concentration; and the second stage is to reduce the concentration of B in the SiGe layer so as to eliminate the short-channel effect. Through the method of the invention, not only a more flat doping tail contour can be acquired after the B doping process is performed so as to reduce the junction leakage phenomenon, and the method can skip the separate ion implantation process so as to make the stress in the channel region maintained; and but also the method can be used to make the doping concentration of B at channels is low so as to eliminate the short-channel effect to make prepared devices have good performances.

A C-ring structure of a new energy automobile is formed by connecting a front C-ring assembly, a rear C-ring assembly, a rear storage table assembly, a right rear wheel cover assembly, a rear floor assembly and a left rear wheel cover assembly. The front C-ring assembly is formed by connecting a front and rear floor upper cross beam assembly, a left front and rear floor upper cross beam plate, a right front and rear floor upper cross beam plate, a left wheel cover front lower plate, a right wheel cover front lower plate, a left wheel cover front plate, a right wheel cover front plate, a left rear storage table front cross beam and a right rear storage table front cross beam; and the rear C-ring assembly is formed by connecting a rear floor rear upper cross beam assembly, a left rear floorupper rear cross beam plate, a right rear floor upper rear cross beam plate, a left wheel cover rear plate, a right wheel cover rear plate and a rear storage table rear cross beam. A complete force conduction path can be constructed on one side of a shock absorber, torsional rigidity and strength of a rear side wall assembly are greatly improved, and the C-ring structure is stable in structure, light in weight and beneficial to reducing energy consumption of a new energy automobile and increasing anendurance mileage of the new energy automobile.

The invention discloses a mixed crystal plane silicon-on-insulator (SOI) bipolar complementary metal oxide semiconductor (BiCMOS) integrated device based on a square channel process and a preparation method. The method comprises the following steps of: preparing an SOI substrate, continuously growing N-Si, P-SiGe and N-Si layers on the SOI substrate, preparing an deep groove isolator, forming a collector, a base and an emitter contact area, and forming a SiGe heterojunction bipolar transistor (HBT) device; photo-etching an active area of a p-channel metal oxide semiconductor (PMOS) device, continuously growing 7 layers of materials in the active area, preparing a drain and a grid, and forming the PMOS device; photo-etching a groove of an active area of an n-channel metal oxide semiconductor (NMOS) device, continuously growing 4 layers of materials in the active area, preparing a grid dielectric layer and grid polycrystalline, and forming the NMOS device; and photo-etching lead holes, alloying, photo-etching leads, and thus forming the mixed crystal plane SOI BiCMOS integrated device and a mixed crystal plane SOI BiCMOS integrated circuit of which CMOS conductive channels are 22 to 45 nanometers based on the square channel process. By fully using the characteristic of mobility anisotropy of a strain Si material, the mixed crystal plane SOI BiCMOS integrated circuit with enhanced performance is prepared at the temperature between 600 and 800 DEG C.

The invention provides an LNG storage tank automatic pre-cooling system based on efficient communication and a pre-cooling method. A CFD numerical simulation module is used for conducting pre-cooling process simulation, and initial flow parameters are provided for the pre-cooling process; and the point positions are installed on a storage tank in a modularized manner, and signal transmission between all sensors in the pre-cooling system and an integrated operation platform is achieved through 5G technology. According to the LNG storage tank automatic pre-cooling system and the pre-cooling method, limit values of parameters such as temperature drop rate, thermal stress, temperature difference between two adjacent points, inner tank pressure and the like are set on the basis of the integrated operation platform, monitoring results and the limit values are compared and analyzed, and then an electric control valve module and a variable frequency pump module are automatically adjusted, so that the conveying flow of a pre-cooling medium is adjusted, and it is guaranteed that the pre-cooling process is stably and safely carried out. According to the LNG storage tank automatic pre-cooling system and method, automatic, integrated and integrated control over the pre-cooling process can be achieved, monitoring personnel do not need to be arranged at monitoring points for a long time, potential safety hazards are avoided, manpower and material resources are saved, pre-cooling control is more accurate, and the pre-cooling efficiency is high.

The invention relates to a stress calculating method of each spring of a non-end contact type few-leaf parabola main-auxiliary spring, and belongs to the hang rack steel plate spring technical field; according to structure parameters, elasticity modulus, auxiliary spring useful load and main-auxiliary spring bearing load of each main spring and each auxiliary spring of the non-end contact type few-leaf parabola variable cross-section main-auxiliary spring, the method can calculate the stress of each main spring and each auxiliary spring in a random position; through embodiments and ANSYS emulation proof, the method can obtain accurate and reliable stress calculation values of each main spring and each auxiliary spring in a random position, thus providing accurate calculation method for the stress values of each main spring and each auxiliary spring in a random position of the non-end contact type few-leaf parabola variable cross-section main-auxiliary spring, improving design level, performance and life of the product, improving vehicle driving smoothness, reducing product design and test cost, and accelerating product develop speed.

The invention discloses an offshore wind turbine foundation structure and a lightweight design method. The offshore wind turbine foundation structure comprises a jacket; the bottom of the jacket is fixed to four piles, the top of the jacket is provided with a transition block, and a wind turbine tower is arranged on the transition block; the jacket comprises four pile legs and a cross structure; and the cross structure is arranged among the pile legs and comprises five layers, including X-shaped structures and K-shaped structures. The offshore wind turbine foundation structure has the advantages that a traditional installation structure of the jacket is changed, a continuum structure is directly optimized by establishing a continuum model, a reasonable truss-type structure with a reasonable force transfer path is obtained, the overall stress is more uniform while the structural weight of the jacket is reduced, and the working safety coefficient is improved.

The invention provides an insect-proof multi-layer eucalyptus wood board and a production method thereof. The production method of the multi-layer board comprises the steps of single plate thin platesorting, thin plate glue applying, cold pressing, hot pressing, standing curing, dust scraping, sanding, repair, trimming and plate pasting, and is characterized in that a layer of insect-proof curedfilm is sprayed at the peripheral surface, the upper surface and the lower surface of a slab before first hot pressing and final hot pressing to prevents glue from being dried too quickly during the hot pressing process and maintain stress inside the multi-layer board, the urea-formaldehyde glue can be fully reacted completely, the formed multi-layer board is not prone to mildewing, in the use process of a user, volatile formaldehyde is also reduced, and after hot pressing, the board is subjected to standing curing, sanding and plate pasting, so that the insect-proof multi-layer eucalyptus wood board product can be obtained by edge sawing and packaging.

The invention discloses a method for preparing an SOI (Silicon On Insulator) strain SiGe Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device and a circuit. The preparation method comprises the steps of manufacturing an SOI bipolar transistor in bipolar device area in an SOI substrate; and conducting photoetching on an MOS (Metal Oxide Semiconductor) active region in the SOI substrate, growing strain SiGe material on the active region to respectively form NMOS (N-Channel Metal Oxide Semiconductor) active region and a PMOS (P-channel Metal Oxide Semiconductor) active region, then depositing SiO2 and polycrystalline silicon in the NMOS active region and the PMOS active region, etching a virtual gird with the length being 22-350nm, conducting self alignment to generate a source-drain region of the MOS by applying a self alignment process, removing the virtual grid, preparing a grid medium and preparing wolfram (W) to be a grid electrode, conducting photoetching on a lead wire to form the integrated device with the length being 22-350nm and the circuit of the MOS device. According to the integrated device prepared by the invention, a lightly doped source drain (LDD) structure is adopted, so that the influence on the performance of the device caused by hot carriers can be inhibited effectively; and a quantum well structure is adopted in a PMOS structure, so that a hole can be limited in a SiGe layer effectively, the interface scattering is reduced, and the electric properties of frequency, current driving capability and the like of the device are improved.

The invention discloses a silicon on insulator (SOI) SiGe bipolar complementary metal oxide semiconductor (BiCMOS) integrated device and a preparation method of the SOI SiGe BiCMOS integrated device. The method comprises the following steps of: growing an N-type Si epitaxial layer on an SOI substrate, preparing shallow-trench isolation, forming a collector contact region, etching to form a side wall, performing wet etching to form a base region window, selectively growing a SiGe base region, photoetching a collector window, depositing an N-type Poly-Si, removing the Poly-Si, and forming a SiGe HBT device; growing a strain SiGe material on the substrate, isolating an active region of the device, photoetching an active region of an N-channel metal oxide semiconductor (NMOS) device, performing P-type ion implantation, preparing a pseudo grid, self-aligning to grow a source drain region of a metal oxide semiconductor (MOS) device, removing the pseudo grid, preparing a lanthanum oxide material to form gate dielectric and preparing metal tungsten to form a gate in a stamping groove at the pseudo grid, photoetching a lead, and preparing the integrated device and the circuit. According to the method, the characteristics of SiGe are fully utilized, and due to the prepared integrated circuit, the performance of the conventional analog and digital/analog mixed integrated circuit is greatly improved.

The invention discloses a vertical-channel mixed-lattice-strain BiCMOS integrated device and a preparation method. The preparation method comprises preparing an SOI (silicon on insulator) substrate, epitaxially growing a Si layer on the substrate as a collector region, preparing deep trench isolation, and preparing a double-polysilicon SiGe HBT (heterojunction bipolar transistor) device on the active region of the bipolar device by self-alignment process; etching an active region of a PMOS (p-channel metal oxide semiconductor) device by lithography, continuously growing seven material layers on the active region, andpreparing a drain and a gate to obtain the PMOS device; etching a trench in the active region of an NMOS (n-channel metal oxide semiconductor) device by lithography, continuously growing four material layers on the active region, preparing a gate dielectric layer and gate polysilicon to obtain the NMOS device, etching lead holes by lithography, alloying, and etching leads by lithography to obtain the vertical-channel mixed-lattice-strain BiCMOS integrated device and circuit with a CMOS conductive channel of 22 to 45nm. The preparation method provided by the invention can prepare the performance-enhanced vertical-channel mixed-lattice-strain BiCMOS integrated device at 600 to 800 DEG C by fully utilizing the characteristics of mobility anisotropy of the tensile strained Si material.