Vertical-channel mixed-lattice-strain BiCMOS (bipolar complementary metal oxide semiconductor) integrated device and preparation method

Abstract

The invention discloses a vertical-channel mixed-lattice-strain BiCMOS integrated device and a preparation method. The preparation method comprises preparing an SOI (silicon on insulator) substrate, epitaxially growing a Si layer on the substrate as a collector region, preparing deep trench isolation, and preparing a double-polysilicon SiGe HBT (heterojunction bipolar transistor) device on the active region of the bipolar device by self-alignment process; etching an active region of a PMOS (p-channel metal oxide semiconductor) device by lithography, continuously growing seven material layers on the active region, andpreparing a drain and a gate to obtain the PMOS device; etching a trench in the active region of an NMOS (n-channel metal oxide semiconductor) device by lithography, continuously growing four material layers on the active region, preparing a gate dielectric layer and gate polysilicon to obtain the NMOS device, etching lead holes by lithography, alloying, and etching leads by lithography to obtain the vertical-channel mixed-lattice-strain BiCMOS integrated device and circuit with a CMOS conductive channel of 22 to 45nm. The preparation method provided by the invention can prepare the performance-enhanced vertical-channel mixed-lattice-strain BiCMOS integrated device at 600 to 800 DEG C by fully utilizing the characteristics of mobility anisotropy of the tensile strained Si material.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor integrated circuits, in particular to a vertical channel mixed crystal plane strain BiCMOS integrated device and a preparation method. Background technique

[0002] The integrated circuit, which appeared in 1958, is one of the most influential inventions of the 20th century. Microelectronics, which was born based on this invention, has become the basis of existing modern technology, accelerating the process of knowledge and informationization of human society, and at the same time changing the way of thinking of human beings. It not only provides humans with a powerful tool to transform nature, but also opens up a broad space for development.

[0003] In the contemporary era of highly developed information technology, microelectronic technology represented by integrated circuits is the key to information technology. As the fastest-growing, most influential and most widely used technology i...

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