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Piezoelectric coefficient detection method

A piezoelectric coefficient and detection method technology, applied in the direction of measuring devices, measuring electrical variables, instruments, etc., to achieve the effects of improving accuracy, reducing deviation, and reducing needle tip deflection

Inactive Publication Date: 2012-09-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0009] The purpose of the present invention is to solve the above-mentioned problems that existing atomic force microscope systems detect the piezoelectric coefficient of piezoelectric materials, and propose a piezoelectric coefficient detection method

Method used

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0026] The piezoelectric coefficient detection method of the present invention specifically comprises the following steps:

[0027] S1. Place the piezoelectric material with the bottom electrode to be tested on the sample stage of the atomic force microscope, and touch the area of ​​the sample to be tested with a conductive probe.

[0028] S2. Every once in a while, load a DC pulse Vdc between the tip of the atomic microscope and the piezoelectric material to be tested;

[0029] If the piezoelectric material to be tested is a nonlinear piezoelectric material, the magnitude of the loaded DC pulse satisfies:

[0030] The size of the DC pulses in adjacent intervals is firstly increased and then decreased, that is, it increases sequentially from the preset minimum value until it increases to the preset maximum value, and then decreases sequentiall...

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Abstract

The invention discloses a piezoelectric coefficient detection method. In the method, after a loading pulse direct current voltage is adopted, a microcell piezoelectric coefficient of a sample is tested by utilizing an alternating current voltage signal, so that a piezoelectric coefficient of a nonlinear piezoelectric sample can be tested; and when a piezoelectric coefficient of a material is tested, a direct current voltage applied to a sample to be tested is stopped, and the piezoelectric coefficient of the sample to be tested is detected under each quasi-static direct current bias voltage, namely each direct current pulse, by utilizing the applied alternating current voltage, so that load is prevented from being accumulated on the surface of the sample to be tested in the test due to the applied direct current electric field so as not to make a probe cantilever generate induction potential, the positional deviation of the probe cantilever caused by the interaction potential of a pinpoint electric field and the surface of the sample to be tested is avoided; and therefore, deviation of an optical circuit of an atomic force microscope is eliminated, and the testing accuracy is improved.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric performance testing of piezoelectric materials, and in particular relates to a detection method for measuring piezoelectric coefficients by using an inverse piezoelectric effect. Background technique [0002] The piezoelectric effect means that the crystal generates bound charges under the action of applied pressure, and the bound charges are proportional to the magnitude of the applied pressure (ie, the positive piezoelectric effect) or mechanically deformed under the action of an applied electric field (ie, the inverse piezoelectric effect). The phenomenon. Materials with piezoelectric effect are collectively referred to as piezoelectric materials, and ferroelectric materials are one type of piezoelectric materials. The charge generated by a piezoelectric material under the action of unit pressure or the amount of deformation generated under the action of unit voltage is called the piezoe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/22
Inventor 韩若冰曾慧中黄文林媛
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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