Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace

Abstract

The invention discloses a massive polycrystalline silicon charging device for a Czochralski silicon single crystal furnace. According to the massive polycrystalline silicon charging device, a barrier ball is used as an isolation device of polycrystalline silicon; a material guiding pipe is used as a material guiding device which is used for injecting the polycrystalline silicon and passes through a gate valve or a flap valve; the gate valve or the flap valve is used as a vacuum device for isolating the Czochralski silicon single crystal furnace; and the dimensions of the devices are far greater than the granularity of the polycrystalline silicon, so that the massive polycrystalline silicon charging device for the Czochralski silicon single crystal furnace can inject the massive polycrystalline silicon of which the granularity is less than 50 millimeters and granular polycrystalline silicon of which the granularity is less than 5 millimeters into the Czochralski silicon single crystal furnace, and thus, the problem that only the granular polycrystalline silicon of which the granularity is less than 5 millimeters can be injected into the Czochralski silicon single crystal furnace, and the massive polycrystalline silicon cannot be injected into the Czochralski silicon single crystal furnace in the conventional polycrystalline silicon charging bin is solved.

Description

technical field [0001] The invention relates to a bulk polysilicon feeding device for a Czochralski silicon single crystal furnace. Background technique [0002] The Czochralski method is mainly used to manufacture silicon single crystal, and the growth of silicon single crystal is completed in a Czochralski silicon single crystal furnace. When using the Czochralski silicon single crystal furnace commonly used now to grow silicon single crystal, in order to reduce energy consumption, improve single furnace yield and quality, refilling technology is generally used. The specific operation method is: first fill the used crucible with block or granular Polysilicon, and then through the steps of vacuuming, polysilicon melting, melt temperature stabilization, seed crystal and melt fusion, thin neck growth, shoulder growth, equal diameter growth, finishing and other steps to grow the first silicon single crystal, the remaining in the crucible is about 1 / 3 of the silicon melt, the ...

AI Technical Summary

Problems solved by technology

[0004] Both Czochralski silicon single crystal furnaces need to use polysilicon feeding bins. The polysilicon feeding bins seen so far can only be filled with granular polysilicon into the single crystal furnace, and cannot be filled with block polysilicon.

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