Surface-roughened double-layer adhesive structure LED light source and manufacturing method thereof

Abstract

The invention relates to a surface-roughened double-layer adhesive structure LED light source and a manufacturing method thereof and belongs to the field of semiconductor illumination. Chips are fixed on an aluminum substrate; a transparent adhesive coating covers the chip and the aluminum substrate; a fluorescent powder coating covers the transparent adhesive coating layer; a plurality of through holes are formed on the aluminum substrate; and the surface of the fluorescent powder coating layer is concave-convex rough surface. The manufacturing method comprises the following manufacturing steps: fixing the chips, treating a mould, injecting an adhesive layer, and solidifying and forming. Compared with the prior art, the surface-roughened double-layer adhesive structure LED light source and the manufacturing method thereof have the beneficial effects that in the surface-roughened double-layer adhesive structure LED light source, a silica gel layer is spaced between fluorescent powder and the chips, so that the effect of chip heating on the fluorescent powder is remarkably reduced, and the stability of the fluorescent powder can be remarkably improved; and meanwhile, when the fluorescent powder coating and an air contact surface are roughened, the total reflection ratio of light transmitted from silica gel to air is reduced, and the luminous flux of the light source is directly improved.

Description

technical field [0001] The invention relates to a surface-roughened double-layer adhesive structure LED light source and a manufacturing method, belonging to the field of semiconductor lighting. Background technique [0002] At present, in the field of semiconductor lighting, improving light efficiency and improving heat dissipation are two main research focuses, and there is a mutual influence between these two factors, especially the heat dissipation effect obviously affects the stability of each component. As far as the current COB integrated packaging light source is concerned, the basic process is to integrate and package multiple chips on a small aluminum substrate, and then coat the phosphor and silica gel mixture on the chip, so as to manufacture the COB integrated packaging light source. Although the process is simple, the existing problems are obvious: after the light source works normally, the chip will continue to heat up, part of the heat will be conducted to th...

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Problems solved by technology

As far as the current COB integrated packaging light source is concerned, the basic process is to integrate and package multiple chips on a small aluminum substrate, and then coat the phosphor and silica gel mixture on the chip, so as to manufacture the COB integrated packaging light source. Although the process is simple, the existing problems are obvious: after the light source works normally, the chip will continue to heat up, part of the heat will be conducted to the heat sink through the aluminum substrate or directly into the air, and part of the heat will be on the surface of the chip and the phosphor, The aggregation of silica gel will cause the temperature of the phosphor to rise significantly, which will cause the quantum efficiency of the phosphor to decay continuously, so that the luminous efficiency of the light source will gradually decrease after working for a long time. Therefore, it is necessary to design and manufacture the light source. Considering the influence of the heat of the chip on the phosphor

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