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Insulation TO220AB power device based on aluminum radiating fin and production method

A technology of TO220AB and power devices, which is applied in the manufacture of electric solid state devices, semiconductor devices, semiconductor/solid state devices, etc., and can solve problems such as ineffective insulation and insufficient heat dissipation

Inactive Publication Date: 2012-10-10
SICHUAN LIPTAI ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The TO220AB package is characterized by good heat dissipation but not effective insulation. The user of the whole machine needs to add an insulating sheet to lock it on the heat sink when using it; the TO220F package is characterized by insulation but not sufficient heat dissipation. and reliability made some restrictions

Method used

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  • Insulation TO220AB power device based on aluminum radiating fin and production method
  • Insulation TO220AB power device based on aluminum radiating fin and production method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Such as figure 1 , 2 As shown, the insulated TO220AB power device based on an aluminum heat sink includes an independent power device, the power device includes a carrier 3, the upper surface of the carrier 3 is soldered with a chip 7 through a solder layer 6, and the chip is connected by a bonding wire 5 There are pins 2, a heat sink 8 is arranged under the carrier 3, there is a gap between the carrier and the heat sink 8, and the gap is filled with a plastic filling layer 4, and the carrier and the heat sink 8 The gap distance between them is between 0.3mm-0.8mm.

[0049] It also includes a plastic package 1 , the power device is plastic packaged inside the plastic package 1 , wherein the pins 2 pierce the plastic package 1 and extend into the plastic package 1 .

[0050] The lower surface of the slide 3 is connected with the filling layer 4 of the molding compound.

[0051] The lower surface of the carrier sheet 3 is flush with the side of the plastic package 1 c...

Embodiment 2

[0075] The difference between this embodiment and Embodiment 1 is that: the method for producing the above-mentioned power device is different: the production method of this embodiment is: the above-mentioned production method for the insulated TO220AB power device based on the aluminum heat sink, including the following steps:

[0076] Step A, assembling the power device: welding the above-mentioned chip on the carrier 3, and welding the above-mentioned pin 2 with the chip through the welding wire;

[0077] Step B, plastic sealing mold: including mold assembly step and compression molding step,

[0078] The mold assembly steps are:

[0079] Take the upper mold and the lower mold of the mold, place the heat sink 8 on the lower mold, and place the assembled power device above the heat sink 8;

[0080] Described stamping step is:

[0081] First take the above-mentioned 0.3mm-0.8mm thick plastic filling layer and place it on the upper surface of the heat sink 8, use the upper m...

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PUM

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Abstract

The invention discloses an insulation TO220AB power device based on an aluminum radiating fin and a production method. The insulation TO220AB power device based on the aluminum radiating fin comprises a power device which is independently designed, wherein the power device comprises a bearing piece, the upper surface of the bearing piece is welded with a chip through a tin soldering layer, the chip is connected with a pin through a welding wire, a radiating fin is arranged under the bearing piece, a gap exists between the bearing piece and the radiating fin, the gap is filled with a plastic package material filling layer, and the gap distance between the bearing piece and the radiating fin is 0.3-0.8 mm. The insulation TO220AB power device based on the aluminum radiating fin, disclosed by the invention, has the advantages that the insulation TO220AB power device has an insulation performance and a fast heat conduction performance, and the power device which can be used for replacing two package ways of TO220AB and TO220F in the background technology can be formed by an optimized structure.

Description

technical field [0001] The present invention relates to the field of semiconductor components, especially insulated TO220AB power devices, specifically referring to insulated TO220AB power devices and production methods based on aluminum heat sinks. Background technique [0002] Semiconductor power devices are widely used in our real life. At present, TO220 high-power devices are mainly divided into two packaging forms: TO220AB and TO220F. The TO220AB package is characterized by good heat dissipation but not effective insulation. The user of the whole machine needs to add an insulating sheet to lock it on the heat sink when using it; the TO220F package is characterized by insulation but not sufficient heat dissipation. and reliability restrictions. Contents of the invention [0003] The purpose of the present invention is to provide an insulating TO220AB power device based on an aluminum heat sink and a production method, which have insulation and rapid thermal conductivi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/31H01L21/56
CPCH01L2924/0002H01L2224/49111H01L2224/48091H01L2224/48247H01L2924/00014H01L2924/00
Inventor 李科蔡少峰
Owner SICHUAN LIPTAI ELECTRONICS