Method for enhancing success rate of extracting transmission electron microscope sample prepared by focused ion beam

A transmission electron microscope sample and focused ion beam technology, which is applied in the preparation of test samples, material analysis by measuring secondary emissions, etc., can solve the problems of sample extraction failure, insufficient static electricity of glass needles, and inaccessibility of glass needles, etc., to achieve Simple and easy to operate, improve the success rate and reduce the cost

Inactive Publication Date: 2012-10-24
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0006] 1. The static electricity of the glass needle is insufficient;
[0007] 2. When the lens sample was prepared by the focused ion beam, the U-CUT section was not done well, so that the sample and the chip were not completely separated
[0008] The above problems will cause the sample to lie flat on the bottom of the groove left during the preparation, so that the glass needle cannot be approached, so that it cannot be extracted, and eventually the sample extraction fails

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  • Method for enhancing success rate of extracting transmission electron microscope sample prepared by focused ion beam
  • Method for enhancing success rate of extracting transmission electron microscope sample prepared by focused ion beam
  • Method for enhancing success rate of extracting transmission electron microscope sample prepared by focused ion beam

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Embodiment Construction

[0022] The method for improving the success rate of TEM samples prepared by extracting focused ion beams proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific examples. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0023] The core idea of ​​the present invention is to provide a method for improving the success rate of extracting a transmission electron microscope sample prepared by a focused ion beam. In the process of sample extraction, when the sample lies flat on the bottom of the groove left during sample preparation, Place an adjustable gasket under the chip to make it at a certain angle, and then use a glass ...

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Abstract

The invention discloses a method for enhancing the success rate of extracting a transmission electron microscope sample prepared by a focused ion beam. According to the method, in the process of extracting the sample, when the sample is horizontally put at the bottom part of a groove left in sample preparation, a gasket with adjustable angle is cushioned below a chip so as to form a certain angle; the sample is adsorbed on a needlepoint of a glass needle by using the glass needle and is transferred to a sample carrier, therefore, the failure in sample extraction because the sample is horizontally put at the bottom part of the groove left in the sample preparation is avoided; the success rate of the sample extraction is enhanced; the cost is reduced; and the operation is easy and simple.

Description

technical field [0001] The invention relates to the technical field of microscopic detection, in particular to a method for improving the success rate of transmission electron microscope samples prepared by extracting focused ion beams. Background technique [0002] As an important tool of electron microscopy, Transmission Electron Microscope (TEM) can simultaneously analyze the microstructure, crystal structure, constituent elements, chemical bonding state, and electron distribution structure of micro-regions. It is a powerful tool for solid material analysis. One of the tools. With the continuous development of the semiconductor industry, the continuous improvement of technology, the continuous reduction of chip size, and the increasingly diversified, three-dimensional, and miniaturized growth of materials, the interfaces, strain states, strain relaxation and The subsequent formation of lattice mismatch dislocations, etc., provides a broad development space for the use of...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/22G01N1/28G01N1/36
Inventor 高林王炯翀陈强高金德
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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