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Perforated plate capacitor type gas sensor and preparation method

A gas sensor and plate capacitance technology, applied in the direction of material capacitance, etc., can solve the problem of low sensor sensitivity and achieve the effect of fast response

Inactive Publication Date: 2012-10-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Although porous gas-sensing media can be conveniently prepared on planar interdigitated and cantilever interdigitated electrodes, as mentioned earlier, the sensor sensitivity of this type of structure is low.

Method used

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  • Perforated plate capacitor type gas sensor and preparation method
  • Perforated plate capacitor type gas sensor and preparation method
  • Perforated plate capacitor type gas sensor and preparation method

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Embodiment

[0031] As shown in Figure 1, a perforated flat plate capacitive gas sensor, the structure includes an insulating silicon substrate 1, an aluminum lower electrode film 2, a nanowire film-type gas-sensitive medium 3, an aluminum upper electrode film 4, silicon top cover5. The preparation process is as follows: the first step, select 300 Thick, (100) tangential single crystal silicon is used as an insulating silicon substrate 1, and KOH is used as an etching solution to etch out a square etching pit. 3 , a microwell 9 with a flat bottom and 54.7° of four sidewalls was obtained. In the second step, the gas hole 6 is etched from the back side of the silicon substrate 1 by dry etching, and the diameter of the gas hole 6 is about 50 mm. , with an interval of about 100 , the etched position is facing the microwell 9, and the entire silicon chip is etched through. (in Figure 1, figure 2 Mesopores are not drawn to scale). The third step is to use evaporation method to deposit...

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Abstract

The invention discloses a perforated plate capacitor type gas sensor which comprises a silicon substrate, a silicon top cover, an upper electrode film, a lower electrode film and an air-sensitive medium. The perforated plate capacitor type gas sensor is characterized in that (1) a micro pit is arranged on the silicon substrate, the lower electrode film is located at the bottom of the micro pit, the upper electrode film is adhered to the silicon top cover and suspended above the micro pit, and the electrode films are not contacted with each other to form a plate capacitor structure; (2) the air-sensitive medium is a chaotically interlaced micro nano wire or micro nano tube and located in the micro pit; and (3) a plurality of air holes are respectively arranged at the positions of the silicon substrate and the silicon top cover corresponding to the micro pit to form an airflow channel. The micro nano wire or micro nano tube serves as the air-sensitive film, superficial area is big, and air spreading and abortion are easy. Therefore, the perforated plate capacitor type gas sensor has the advantages of being rapid in response and high in sensitivity and can detect gas with extremely low concentration, and a preparation method is simple.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a flat capacitive gas sensor with perforations and a preparation method thereof. Background technique [0002] The capacitive gas sensor is mainly composed of an electrode and a gas-sensitive medium. After the gas-sensitive medium absorbs the gas to be measured, the dielectric constant changes, resulting in a change in the capacitance value. The electrodes of the sensor mainly have two types: plate capacitor type and planar interdigitated electrode type. No matter which one is used, the gas-sensitive medium must be in the electric field generated by the two electrodes (the electric line must pass through the gas-sensitive medium). Otherwise, the change in dielectric constant after gas adsorption will not contribute to the capacitance value. [0003] The conventional planar interdigitated capacitive sensor is deposited on the planar interdigitated dielectric thin film, and ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/22
Inventor 杜晓松蔡贝贝邱栋蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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