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Silicon carbide semiconductor device

A semiconductor and silicon carbide technology, applied in the field of silicon carbide semiconductor devices, can solve the problems of low insulation withstand voltage, short life, etc.

Active Publication Date: 2016-01-13
DENSO CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when fabricating a vertical type MOSFET with a trench gate structure, a concave-convex structure may be formed on the sidewall and / or bottom of the trench
Therefore, the gate insulating film provided on the side walls and bottom of the trench may have a low dielectric withstand voltage and a short lifetime

Method used

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  • Silicon carbide semiconductor device
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  • Silicon carbide semiconductor device

Examples

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no. 1 example

[0025] In consideration of the above difficulties, the SiC semiconductor device according to the first embodiment will be explained. Here, the SiC semiconductor device is, for example, an inversion MOSFET with a trench gate structure.

[0026] figure 1 A part of the MOSFET according to this embodiment is shown. figure 1 A part in corresponds to a unit of MOSFET. although figure 1 Only one cell in the MOSFET is shown, but multiple cells are arranged in one direction. Figures 2A to 2D A cross-section of a MOSFET is shown. Figure 2A shows the plane parallel to the X-Z plane along the figure 1 A cross-sectional view of the MOSFET taken on line IIA-IIA in . Figure 2B is shown in a plane parallel to the X-Z plane along the figure 1 A cross-sectional view of the MOSFET taken on line IIB-IIB in . Figure 2C shows the plane parallel to the Y-Z plane along the figure 1 The cross-sectional view of the MOSFET taken at the line IIC-IIC. Figure 2D shows the plane parallel to t...

no. 2 example

[0066] A second embodiment of the present disclosure will be explained. In this embodiment, the offset direction and the longitudinal direction of the groove 6 are different from those of the first embodiment.

[0067] Figure 7 The upper surface layout of the SiC semiconductor substrate when trench 6 is formed is shown. Such as Figure 7 As shown in , the offset direction of the SiC semiconductor substrate is the direction. In this case, the longitudinal direction of the groove 6 is the direction, which is perpendicular to the direction as the offset direction.

[0068] Therefore, the offset direction is the direction, and the longitudinal direction of the trench 6 is the direction. In this case, effects similar to those of the first embodiment are obtained.

[0069] (other embodiments)

[0070] In the first embodiment, when the SiC semiconductor substrate has a Si plane, the offset direction is the direction, and the longitudinal direction of the trench 6 is the ...

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PUM

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Abstract

A SiC semiconductor device comprising: a SiC substrate (1, 2) comprising a first or second conductivity type layer (1) and a first conductivity type drift layer (2), and comprising a main surface having an offset direction; A trench (6) provided on the drift layer and having a longitudinal direction; and a gate electrode (9) provided in the trench via a gate insulating film (8). The sidewalls of the trench provide a channel-forming surface. The vertical semiconductor device flows current along the channel-forming surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

Description

technical field [0001] The present disclosure relates to a silicon carbide semiconductor device having a trench gate type MOSFET. Background technique [0002] In SiC (silicon carbide) semiconductor devices, it is effective to increase the channel density in order to flow a large current. With this in mind, trench gate type MOSFETs are used for silicon transistors. SiC semiconductor devices may have a trench gate structure. Therefore, a vertical type MOSFET having a trench gate structure made of SiC is proposed in JP-A-2008-177538, JP-A-2008-294210, and JP-A-2009-289987. [0003] However, when a vertical type MOSFET having a trench gate structure is manufactured, a concavo-convex structure may be formed on the sidewall and / or bottom of the trench. Therefore, the gate insulating film provided on the side walls and bottom of the trench may have a low dielectric withstand voltage and a short lifetime. Since the breakdown electric field strength of a SiC semiconductor device...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/06H01L21/04
CPCH01L29/045H01L29/0634H01L29/1095H01L29/1608H01L29/66068H01L29/7397H01L29/7813
Inventor 渡边弘纪宫原真一朗杉本雅裕高谷秀史渡边行彦副岛成雅石川刚
Owner DENSO CORP