High-voltage switch cabinet insulator electric field optimization method based on quantum genetic algorithm

A quantum genetic algorithm, high-voltage switchgear technology, applied in computing, genetic models, electrical digital data processing, etc., can solve problems such as unfavorable research and development of new products, high cost, and increased scrap rate

Active Publication Date: 2012-11-07
HOHAI UNIV CHANGZHOU
View PDF2 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The sealed feature of the switchgear makes it difficult to measure the electric field performance of the switchgear at work and related factors affecting the electric field performance of the product during the experiment, so it cannot guide the improvement and optimization of the switchgear well, and can only be based on past experience. Make some local modifications, and then manufacture prototypes, experimental tests, and then partial modifications until the product passes the experimental test
This method based on experience and manual repeated processes not only has a long time period, low efficiency, and the performance of the switchgear cannot be guaranteed, but also tends to increase the scrap rate in the manufacturing process and is costly, especially not conducive to the research and development of new products.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage switch cabinet insulator electric field optimization method based on quantum genetic algorithm
  • High-voltage switch cabinet insulator electric field optimization method based on quantum genetic algorithm
  • High-voltage switch cabinet insulator electric field optimization method based on quantum genetic algorithm

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Step 1 establishes the geometric model of the insulator.

[0045] Step 2 Use the finite element software ANSOFT-MAXWELL to simulate the electrostatic field of the insulator model to obtain the maximum electric field strength value and determine the structural factors that affect the electric field distribution and the maximum field strength.

[0046] Step 3 Initialize the population: Use the random method to initialize the high and low voltage diameters of the insulators through the genetic code of the quantum chromosome to start the multivariate single-objective iterative optimization problem. Initialization is divided into two steps:

[0047] 1) Calculate the length of the chromosome according to the required accuracy

[0048] In this calculation example, the required accuracy is e=0.0001; the optimized variable high and low pressure port diameter is an array of 1 row and 6 columns, the value range of high pressure port diameter R1 is 80-90, and the value range of lo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-voltage switch cabinet insulator electric field optimization method based on a quantum genetic algorithm. The method comprises the following steps that 1) a high-voltage switch cabinet insulator geometric model is built; 2) the high-voltage switch cabinet insulator model is subjected to electrostatic field simulation to obtain the maximum electric field intensity value, and structural factors for influencing the electric field distribution and the maximum field intensity are determined through changing variable structural parameters; 3) a population is initialized; 4) an objective function is determined, and a fitness degree function is calculated, wherein the objective function of an individual is the electric field intensity corresponding to the parameters; 5) for the individual population consisting of binary gene codes, the variation is carried out after the selection and the full-interference crossing; and 6) whether the quantum genetic operation stop condition is met or not is judged, if the stop condition is not met, the operation returns to the first step, and if the stop condition is met, the corresponding response value is calculated according to the optimized structure parameters obtained in the fifth step, and the maximum electric field intensity value is obtained. The method can realize the optimization on the high-voltage switch cabinet insulator electric field.

Description

technical field [0001] The invention relates to an optimization design method of an insulator electric field, one of the internal structures of a high-voltage switch cabinet, and belongs to the technical field of structural optimization of a high-voltage switch cabinet in a power system. Background technique [0002] As a complete set of switchgear for receiving and distributing network power and controlling, protecting and monitoring electrical equipment, switchgear is widely used in various substations (stations). Since the gas-insulated switchgear adopts a metal-enclosed structure, components such as circuit breakers and switches are sealed in the SF6 gas chamber, but the sensitivity of the SF6 gas insulation performance to the uniformity of the electric field is much greater than that of air, that is, the SF6 under extremely uneven electric field. The breakdown voltage is much lower than that in a uniform electric field than in air. Therefore, in the design of the switc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50G06N3/12
CPCY02E60/76Y04S40/22Y02E60/00
Inventor 苗红霞齐本胜代佳佳石潇锋赵国芬
Owner HOHAI UNIV CHANGZHOU
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products