Memory device with external chip controller and manufacturing method of memory device

Abstract

The invention discloses an integrated circuit memory device and a manufacturing method thereof. The method and the device are applicable to low-cost processes, and the device comprises a memory circuit and a peripheral circuit. The memory circuit and the peripheral circuit of the device are positioned on different layers achieved in a laminated structure. A memory circuit layer and a peripheral circuit layer comprise complementary interconnection surfaces, and electrical interconnection can be established by the aid of matching of the complementary interconnection surfaces of the memory circuit and the peripheral circuit. Besides, the memory circuit layer and the peripheral circuit layer can be formed on different substrates respectively on different production lines by means of different processes. By the manufacturing means, the memory circuit layer and the peripheral circuit layer can be manufactured by using independent process equipment and technologies respectively, one process technology is used for manufacturing memory arrays, and the other process technology is used for manufacturing peripheral circuits. Further, the independent circuits can be laminated and bonded together.

Description

technical field [0001] The invention relates to an integrated circuit memory device and a manufacturing method thereof. Background technique [0002] When manufacturing high-density memory devices, the data storage capacity per unit area on the integrated circuit will be a key indicator. Therefore, when the critical dimension technology of the memory device has reached the bottleneck, in order to achieve a higher storage density per bit and reduce the production cost per bit, it is generally recommended to stack multiple levels of memory cells. In addition, new memory technologies are being developed, including phase change memory, ferromagnetic memory, and metal oxide based memory. [0003] Memory technology requires a series of different process steps, followed by the fabrication of minor peripheral circuits such as address decoders, state machines, and command decoders. Since both the memory array and the peripheral circuitry require manufacturing steps to support it, t...

AI Technical Summary

Problems solved by technology

Since both the memory array and the peripheral circuitry require support for the manufacturing steps, the production line used to implement the memory device may be expensive or compromised by the circuitry required to manufacture the peripheral circuitry

This will lead to the use of higher-end technology to manufacture integrated circuits for memory devices, resulting in higher process costs

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